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參數資料
| 型號： | HYB39S256400DT |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | 256 MBit Synchronous DRAM |
| 中文描述： | 256兆位同步DRAM |
| 文件頁數： | 1/22頁 |
| 文件大小： | 564K |
| 代理商： | HYB39S256400DT |
INFINEON Technologies
1
2002-04-23
HYB39S256400/800/160DT(L)/DC(L)
256MBit Synchronous DRAM
256 MBit Synchronous DRAM
The HYB39S256400/800/160DT(L) are four bank Synchronous DRAM’s organized as 4 banks x
16MBit x4, 4 banks x 8MBit x8 and 4 banks x 4Mbit x16 respectively. These synchronous devices
achieve high speed data transfer rates for CAS-latencies by employing a chip architecture that
prefetches multiple bits and then synchronizes the output data to a system clock. The chip is
fabricated with INFINEON’s advanced 0.14
μ
m 256MBit DRAM process technology.
The device is designed to comply with all industry standards set for synchronous DRAM products,
both electrically and mechanically. All of the control, address, data input and output circuits are
synchronized with the positive edge of an externally supplied clock.
Operating the four memory banks in an interleave fashion allows random access operation to occur
at a higher rate than is possible with standard DRAMs. A sequential and gapless data rate is
possible depending on burst length, CAS latency and speed grade of the device.
Auto Refresh (CBR) and Self Refresh operation are supported. These devices operate with a single
3.3V +/- 0.3V power supply. All 256Mbit components are available in TSOPII-54 and TFBGA-54
packages.
High Performance:
Fully Synchronous to Positive Clock Edge
0 to 70
°
C operating temperature
Four Banks controlled by BA0 & BA1
Programmable CAS Latency: 2 & 3
Programmable Wrap Sequence: Sequential
or Interleave
Programmable Burst Length:
1, 2, 4, 8 and full page
Multiple
Burst
Read
Operation
Automatic
and
Controlled
Command
with
Single
Write
Precharge
-6
-7
-7.5
-8
Units
fCK
166
143
133
125
MHz
tCK3
6
7
7.5
8
ns
tAC3
5
5.4
5.4
6
ns
tCK2
7.5
7.5
10
10
ns
tAC2
5.4
5.4
6
6
ns
Data Mask for Read / Write control (x4, x8)
Data Mask for byte control (x16)
Auto Refresh (CBR) and Self Refresh
Power Down and Clock Suspend Mode
8192 refresh cycles / 64 ms (7,8
μ
s)
Random Column Address every CLK
( 1-N Rule)
Single 3.3V +/- 0.3V Power Supply
LVTTL Interface versions
Plastic Packages:
P-TSOPII-54 400mil width (x4, x8, x16)
Chipsize Packages:
54 ball TFBGA (12 mm x 8 mm)
-6 parts for PC166 3-3-3 operation
-7 parts for PC133 2-2-2 operation
-7.5 parts for PC133 3-3-3 operation
-8 parts for PC100 2-2-2 operation
相關PDF資料 |
PDF描述 |
|---|---|
| HYB39S256400DT-6 | 256 MBit Synchronous DRAM |
| HYB39S256400DT-7 | 256 MBit Synchronous DRAM |
| HYB39S256400DT-75 | 256 MBit Synchronous DRAM |
| HYB39S256400DT-8 | 256 MBit Synchronous DRAM |
| HYB39S256400DCL-6 | 256-MBit Synchronous DRAM |
相關代理商/技術參數 |
參數描述 |
|---|---|
| HYB39S256400DT-6 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:256-MBit Synchronous DRAM |
| HYB39S256400DT-7 | 制造商:Infineon Technologies AG 功能描述: |
| HYB39S256400DT-7.5 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:?256Mb (64Mx4) PC133 3-3-3? |
| HYB39S256400DT-75 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:256-MBit Synchronous DRAM |
| HYB39S256400DT-8 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:256-MBit Synchronous DRAM |
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