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參數資料
| 型號： | HYB5117805BJ-50 |
| 廠商： | SIEMENS A G |
| 元件分類： | DRAM |
| 英文描述： | 2M x 8 - Bit Dynamic RAM 2k Refresh |
| 中文描述： | 2M X 8 EDO DRAM, 50 ns, PDSO28 |
| 文件頁數： | 1/25頁 |
| 文件大小： | 258K |
| 代理商： | HYB5117805BJ-50 |
Semiconductor Group 1 1.96
2 097 152 words by 8-bit organization
0 to 70 °C operating temperature
Performance:
Single + 5 V (
±
10 %) supply
Low power dissipation
max. 660 mW active (-50 version)
max. 605 mW active (-60 version)
max. 550 mW active (-70 version)
11 mW standby (TTL)
5.5. mW standby (MOS)
Read, write, read-modify-write, CAS-before-RAS refresh, RAS-only refresh, hidden refresh,
self refresh and test mode
Hyper page mode (EDO) capability
All inputs, outputs and clocks fully TTL-compatible
2048 refresh cycles / 32 ms (2k-Refresh)
Plastic Package:
P-SOJ-28-3 400 mil
-50
-60
-70
tRAC
tCAC
tAA
tRC
tHPC
RAS access time
50
60
70
ns
CAS access time
13
15
20
ns
Access time from address
25
30
35
ns
Read/Write cycle time
84
104
124
ns
Hyper page mode (EDO)
cycle time
20
25
30
ns
2M x 8 - Bit Dynamic RAM
2k Refresh
(Hyper Page Mode- EDO)
Advanced Information
HYB5117805BSJ -50/-60/-70
相關PDF資料 |
PDF描述 |
|---|---|
| HYB5117805BSJ-50 | 2M x 8-Bit Dynamic RAM 2k Refresh |
| HYB5117805BSJ-50- | 2M×8 - Bit Dynamic RAM 2k Refresh |
| HYB5117805BSJ-60 | 2M x 8-Bit Dynamic RAM 2k Refresh |
| HYB5118160BSJ-50 | 1M x 16-Bit Dynamic RAM |
| HYB5118160BSJ-70 | 1M x 16-Bit Dynamic RAM |
相關代理商/技術參數 |
參數描述 |
|---|---|
| HYB5117805BJ-60 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:2M x 8 - Bit Dynamic RAM 2k Refresh |
| HYB5117805BJ-70 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:2M x 8 - Bit Dynamic RAM 2k Refresh |
| HYB5117805BSJ-50 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:2M x 8-Bit Dynamic RAM 2k Refresh |
| HYB5117805BSJ-50- | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:2M x 8 - Bit Dynamic RAM 2k Refresh |
| HYB5117805BSJ-50-60 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:2M x 8-Bit Dynamic RAM 2k Refresh |
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