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參數(shù)資料
型號(hào)： HYE25L256160AC-8*
英文描述： ?256M (16Mx16) 125MHz 2-2-2 Ext. Temp. ?
中文描述： ？256M（16Mx16顯示）125MHz的2-2-2分機(jī)。溫度。 ？
文件頁(yè)數(shù)： 1/49頁(yè)
文件大小： 292K
HYB/E 25L128160AC
128-MBit Mobile-RAM
INFINEON Technologies
1
12/01
The HYB/E 25L128160AC Mobile-RAMs are a new generation of low power, four bank
Synchronous DRAM’s organized as 4 banks
×
2Mbit x16 with additional features for mobile
applications. These synchronous Mobile-RAMs achieve high speed data transfer rates by
employing a chip architecture that prefetches multiple bits and then synchronizes the output data to
a system clock. The chip is fabricated using the Infineon advanced process technology.
The device adds new features to the industry standards set for synchronous DRAM products.
Parts of the memory array can be selected for Self-Refresh and the refresh period during Self-
Refresh is programmable in 4 steps which drastically reduces the self refresh current, depending on
the case temperature of the components in the system application. In addition a “Deep Power Down
Mode” is available. Operating the four memory banks in an interleave fashion allows random access
operation to occur at higher rate. A sequential and gapless data rate is possible depending on burst
length, CAS latency and speed grade of the device. The device operates from a 2.5V power supply
for the core and 1.8V for the bus interface.
The Mobile-RAM is housed in a FBGA “chip-size” package. The Mobile-RAM is available in the
commercial (0
0
to 70
0
C) and Extended
( -25
o
C to +85
o
C) temperature range.
High Performance:
8Mbit x 16 organisation
VDD = 2.5V, VDDQ = 1.8V / 2.5V
Fully Synchronous to Positive Clock Edge
Four Banks controlled by BA0 & BA1
Programmable CAS Latency: 1, 2, 3
Programmable Wrap Sequence: Sequential
or Interleave
Deep Power Down Mode
Automatic and Controlled Precharge
Command
Programmable Burst Length: 1, 2, 4, 8 and
full page
Programmable Power Reduction Feature by
partial array activation during Self-Refresh
Data Mask for byte control
Auto Refresh (CBR)
4096 Refresh Cycles / 64ms
Self Refresh with programmble refresh period
Power Down and Clock Suspend Mode
Random Column Address every CLK
(1-N Rule)
54-FBGA , with 9 x 6 ball array with 3
depopulated rows, 9 x 8 mm
Operating Temperature Range
Commerical ( 0
0
to 70
0
C)
Extended ( -25
o
C to +85
o
C)
-7.5
-8
Units
f
CK,MAX
133
125
MHz
t
CK3,MIN
7.5
8
ns
t
AC3,MAX
5.4
6
ns
t
CK2,MIN
9.5
9.5
ns
t
AC2,MAX
6
6
ns
128-MBit Synchronous Low-Power DRAM in Chipsize Packages
Datasheet (Rev. 12/01)
相關(guān)PDF資料
PDF描述
HYM22100S-60 x8 Fast Page Mode DRAM Module
HYM22100S-70 x8 Fast Page Mode DRAM Module
HYM22100S-80 x8 Fast Page Mode DRAM Module
HYM32V4040GD-60 x32 Fast Page Mode DRAM Module
HYM321110S-60 x32 Fast Page Mode DRAM Module
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HYE25L256160AF 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:256MBit Mobile-RAM
HYE25L256160AF-7.5 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:BJAWBMSpecialty DRAMs Mobile-RAM
HYE25L256160AF-75 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:256MBit Mobile-RAM
HYESD0514P 制造商:HY 制造商全稱:HY ELECTRONIC CORP. 功能描述:4 Channel Low Capacitance ESD Protection Diode Array
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