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參數資料
| 型號： | HYM7V75AC801BTHG-8 |
| 英文描述： | x72 SDRAM Module |
| 中文描述： | x72內存模塊 |
| 文件頁數： | 1/13頁 |
| 文件大小： | 172K |
| 代理商： | HYM7V75AC801BTHG-8 |
8Mx72 bits
PC133 SDRAM Unbuffered DIMM
based on 8Mx8 SDRAM with LVTTL, 4 banks & 4K Refresh
HYM7V73A801B F-Series
This document is a general product description and is subject to change without notice. Hyundai Electronics does not assume
any responsibility for use of circuits described. No patent licenses are implied.
Rev. 1.1/Apr.01
1999 Hyundai Electronics
DESCRIPTION
The Hynix HYM7V73A801B F-Series are 8Mx72bits ECC Synchronous DRAM Modules. The modules are composed of
nine 8Mx8bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP
package on a 168pin glass-epoxy printed circuit board. A 0.33uF and a 0.1uF decoupling capacitors per each SDRAM
are mounted on the PCB.
The HYM7V73A801B F-Series are Dual In-line Memory Modules suitable for easy interchange and addition of 64Mbytes
memory. The HYM7V75A801B F-Series are offering fully synchronous operation referenced to a positive edge of the
clock. All inputs and outputs are synchronized with the rising edge of the clock input. The data paths are internally
pipelined to achieve very high bandwidth.
FEATURES
PC133/100MHz support
168pin SDRAM Unbuffered DIMM
Serial Presence Detect with EEPROM
1.375” (34.93mm) Height PCB with Single Sided
components
Single 3.3
±
0.3V power supply
All devices pins are compatible with LVTTL interface
Data mask function by DQM
SDRAM internal banks : four banks
Module bank : one physical bank
Auto refresh and self refresh
4096 refresh cycles / 64ms
Programmable Burst Length and Burst Type
-. 1, 2, 4, 8, or Full Page for Sequential Burst
-. 1, 2, 4 or 8 for Interleave Burst
Programmable /CAS Latency
-. 2, 3 clocks
ORDERING INFORMATION
PART NO.
MAX.
FREQUENCY
INTERNAL
BANK
REF.
POWER
SDRAM
PACKAGE
PLATING
HYM7V73A801BTFG-75
133MHz
4 Banks
4K
Normal
TSOP-II
Gold
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