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參數資料
| 型號： | HYMA6V32730E14HGTG |
| 英文描述： | 32Mx72|3.3V|45|x36|FP/EDO DRAM - 256MB Buffered DIMM |
| 中文描述： | 32Mx72 | 3.3 | 45 | x36 |計劃生育/ EDO公司的DRAM - 256MB的緩沖DIMM |
| 文件頁數： | 1/28頁 |
| 文件大?。?/td> | 494K |
| 代理商： | HYMA6V32730E14HGTG |
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HYMA6V16730E14HGTG
16Mx72 buffered EDO DRAM DIMM
This document is a general product description and is subject to change without notice. Hyundai Electronics does not assume any
responsibility for use of circuits described. No patent licenses are implied.
Rev.0.1/Apr.01
Description
The HYMA6V16730E14HGTG familiy is an 16Mx72 bits Dynamic RAM Module which is assembled 18 pieces of
16Mx4bit DRAMs in 32pin TSOP-II package and two 16bit driver ICs in 48pin TTSOP package mounted on a 168pin
printed circuit board with decoupling capacitors.
The HYMA6V16730E14HGTG is optimized for application to the systems which are required high density and large
capacity such as main memory of the computers and an image memory systems, and to the others which are
requested compact size.
The HYMA6V16730E14HGTG provides common data inputs and extended data outputs
Features
Extended data output(EDO) mode capability
*Fast access time & cycle time
Part No
tRAC
tCAC
tRC
tHPC
HYMA6V16730E14HGTG-5
50ns
18ns
84ns
20ns
HYMA6V16730E14HGTG-6
60ns
20ns
104ns
25ns
Ordering Information
Part No.
Power Suppy
Clock Frequency
Interface
Form Factor
HYMA6V16730E14HGTG-5
3.3V
50ns
TTL
168pin buffered DIMM
5.25x1.25 inch
HYMA6V16730E14HGTG-6
60ns
PRELIMINARY
All inputs and outputs TTL compatible
/RAS only refresh, /CAS before /RAS
refresh,Hidden refresh capability
Single Power supply
4K Refresh cycle / 64ms
- HYMA6V16730E14HGTG : Gold plating
Low power
- active : 9144/8496mW(Max)
- standby : 105mW(CMOS level : Max)
168pins Dual In-Line Package
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