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參數(shù)資料
型號(hào): HYS72V32220GU-8B
廠商: SIEMENS A G
元件分類: DRAM
英文描述: 3.3 V 16M x 64/72-Bit SDRAM Modules 3.3 V 32M x 64/72-Bit SDRAM Modules 3.3 V 64M x 64/72-Bit SDRAM Modules
中文描述: 32M X 72 SYNCHRONOUS DRAM MODULE, 6 ns, DMA168
封裝: DIMM-168
文件頁數(shù): 1/17頁
文件大小: 84K
代理商: HYS72V32220GU-8B
Semiconductor Group
1
1998-08-01
3.3 V 16M
×
64/72-Bit SDRAM Modules
3.3 V 32M
×
64/72-Bit SDRAM Modules
3.3 V 64M
×
64/72-Bit SDRAM Modules
PC100-168 pin unbuffered DIMM Modules
HYS 64/72V16200GU
HYS 64/72V32220GU
HYS 64/72V32200GU
HYS 64/72V64220GU
Preliminary Information
168 Pin unbuffered 8 Byte Dual-In-Line SDRAM Modules for PC main memory applications
One bank 16M
×
64, 16M
×
72, 32M
×
64 and 32M
×
72 organization
Two bank 32M
×
64, 32M
×
72, 64M
×
64 and 64M
×
72 organization
Optimized for byte-write non-parity or ECC applications
Fully PC board layout compatible to INTEL’s Rev. 1.0 module specification
JEDEC standard Synchronous DRAMs (SDRAM)
SDRAM Performance:
Programmed Latencies:
Single + 3.3 V (
±
0.3 V) power supply
Programmable CAS Latency, Burst Length and Wrap Sequence
(Sequential & Interleave)
Auto Refresh (CBR) and Self Refresh
Decoupling capacitors mounted on substrate
All inputs, outputs are LVTTL compatible
Serial Presence Detect with E
2
PROM
Utilizes 32M
×
8 SDRAMs in TSOPII-54 packages
Uses SIEMENS 128Mbit and 256Mbit SDRAM components
Gold contact pad
Card Size: 133.35 mm
×
31.75 mm
×
4.00 mm
-8
-8B
Units
f
CK
t
AC
Clock frequency (max.)
100
100
MHz
Clock access time
6
6
ns
Product Speed
CL
t
RCD
2
t
RP
2
-8
PC100
2
-8B
PC100
3
2
3
相關(guān)PDF資料
PDF描述
HYS72V16200GU-8 3.3 V 16M x 64/72-Bit SDRAM Modules 3.3 V 32M x 64/72-Bit SDRAM Modules 3.3 V 64M x 64/72-Bit SDRAM Modules
HYS72V16200GU-8B 3.3 V 16M x 64/72-Bit SDRAM Modules 3.3 V 32M x 64/72-Bit SDRAM Modules 3.3 V 64M x 64/72-Bit SDRAM Modules
HYS72V32200GU-8 3.3 V 16M x 64/72-Bit SDRAM Modules 3.3 V 32M x 64/72-Bit SDRAM Modules 3.3 V 64M x 64/72-Bit SDRAM Modules
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HYS64V32220GDL-7-D ?256MB PC133 (2-2-2) 2-bank?
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