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參數資料
| 型號： | MBR6035PT |
| 廠商： | DIODES INC |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | CAP 1.0UF 16V 10% X7R SMD-1206 T&R-7IN-PL NI-SN |
| 中文描述： | 60 A, 35 V, SILICON, RECTIFIER DIODE |
| 封裝： | ROHS COMPLIANT, PLASTIC, TO-3P, 3 PIN |
| 文件頁數： | 1/2頁 |
| 文件大小： | 63K |
| 代理商： | MBR6035PT |
D
S
30053 Rev. B-2
1 of 2
MBR6030PT - MBR6045PT
MBR6030PT - MBR6045PT
60A SCHOTTKY BARRIER RECTIFIER
Features
A
B
E
G
J
L
M
N
K
S
M
H
R
D
C
P*
*2 Places
Q
TO-3P
Min
Dim
A
B
C
D
E
G
H
J
K
L
M
N
P
Q
R
S
All Dimensions in mm
Max
3.20
3.50
4.59
5.16
20.80
21.30
19.70
20.20
2.10
2.40
0.51
0.76
15.90
16.40
1.70
2.70
3.10
3.30
3.50
4.51
5.20
5.70
1.12
1.22
1.93
2.18
2.97
3.22
11.70
12.80
4.30 Typical
Maximum Ratings and Electrical Characteristics
@ T
A
= 25 C unless otherwise specified
Schottky Barrier Chip
Guard Ring Die Construction for
Transient Protection
Low Power Loss, High Efficiency
High Surge Capability
High Current Capability and Low Forward
Voltage Drop
For Use in Low Voltage, High Frequency
Inverters, Free Wheeling, and Polarity
Protection Application
Plastic Material: UL Flammability
Classification Rating 94V-0
Mechanical Data
Case: Molded Plastic
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: As Marked on Body
Weight: 5.6 grams (approx.)
Mounting Position: Any
Marking: Type Number
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Symbol
MBR
6030PT
MBR
6035PT
MBR
6040PT
MBR
6045PT
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
V
R(RMS)
30
35
40
45
V
RMS Reverse Voltage
Average Rectified Output Current
21
25
28
32
V
@ T
C
= 125 C
(Note 1)
I
O
60
A
Non-Repetitive Peak Forward Surge Current 8.3ms
single half sine-wave superimposed on rated load
(JEDEC Method)
Forward Voltage Drop
I
FSM
500
A
@ I
F
= 30A, T
C
= 25 C
@ I
F
= 30A, T
C
= 125 C
@ I
F
= 60A, T
C
= 25 C
@ T
C
= 25 C
@ T
C
= 100 C
V
FM
0.62
0.55
0.75
V
Peak Reverse Current
at Rated DC Blocking Voltage
Typical Junction Capacitance (Note 2)
Typical Thermal Resistance Junction to Case (Note 1)
Operating and Storage Temperature Range
I
RM
1.0
50
650
1.0
mA
C
j
pF
K/W
C
R
Jc
T
j,
T
STG
-55 to +150
Notes:
1. Thermal resistance junction to case mounted on heatsink.
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
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相關代理商/技術參數 |
參數描述 |
|---|---|
| MBR6035PT C0 | 制造商:SKMI/Taiwan 功能描述:Diode Schottky 35V 60A 3-Pin(3+Tab) TO-3P Tube |
| MBR6035PT_1 | 制造商:TSC 制造商全稱:Taiwan Semiconductor Company, Ltd 功能描述:60 AMPS. Schottky Barrier Rectifiers |
| MBR6035PT_10 | 制造商:TSC 制造商全稱:Taiwan Semiconductor Company, Ltd 功能描述:60 AMPS. Schottky Barrier Rectifiers |
| MBR6035R | 功能描述:肖特基二極管與整流器 35V - 60A Schottky Rectifier RoHS:否 制造商:Skyworks Solutions, Inc. 產品:Schottky Diodes 峰值反向電壓:2 V 正向連續電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復時間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
| MBR6040 | 功能描述:肖特基二極管與整流器 40V - 60A Schottky Rectifier RoHS:否 制造商:Skyworks Solutions, Inc. 產品:Schottky Diodes 峰值反向電壓:2 V 正向連續電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復時間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
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