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參數資料
| 型號： | 2SK2776 |
| 元件分類： | JFETs |
| 英文描述： | 8 A, 500 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | LEAD FREE, 2-10S1B, 3 PIN |
| 文件頁數： | 1/6頁 |
| 文件大小： | 444K |
| 代理商： | 2SK2776 |
2SK2776
2010-04-06
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (πMOSV)
2SK2776
Chopper Regulator, DCDC Converter and Motor Drive
Applications
Low drainsource ON-resistance
: RDS (ON) = 0.75 (typ.)
High forward transfer admittance
: |Yfs| = 7.0 S (typ.)
Low leakage current
: IDSS = 100 μA (max) (VDS = 500 V)
Enhancement mode
: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drainsource voltage
VDSS
500
V
Draingate voltage (RGS = 20 k)
VDGR
500
V
Gatesource voltage
VGSS
±30
V
DC (Note 1)
ID
8
A
Drain current
Pulse (Note 1)
IDP
32
A
Drain power dissipation (Tc = 25°C)
PD
65
W
Single pulse avalanche energy
(Note 2)
EAS
312
mJ
Avalanche current
IAR
8
A
Repetitive avalanche energy (Note 3)
EAR
6.5
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature,
etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage,
etc.) are within the absolute maximum ratings. Please design the
appropriate reliability upon reviewing the Toshiba Semiconductor
Reliability Handbook (“Handling Precautions”/“Derating Concept and
Methods”) and individual reliability data (i.e. reliability test report and
estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (chc)
1.92
°C / W
Thermal resistance, channel to ambient
Rth (cha)
83.3
°C / W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 8.3 mH, RG = 25 ,
IAR = 8 A
Note 3: Repetitive rating: pulse width limited by maximum channel
temperature
This transistor is an electrostatic-sensitive device.
Please handle with caution.
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-10S1B
Weight: 1.5 g (typ.)
JEDEC
―
JEITA
―
TOSHIBA
2-10S2B
Weight: 1.5 g (typ.)
相關PDF資料 |
PDF描述 |
|---|---|
| 2SK2787LS | 8 A, 450 V, 0.75 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK2791TP | 4000 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2SK2838(2-10S2B) | 5.5 A, 400 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK2838(2-10S1B) | 5.5 A, 400 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK2839 | 10 A, 30 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SK2776(Q) | 功能描述:MOSFET MOSFET N-Ch 500V 8A Rdson=0.85Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2SK2776(TE24L,Q) | 功能描述:MOSFET MOSFET N-Ch 500V 8A Rdson=0.85Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2SK2776-SM(Q) | 制造商:Toshiba America Electronic Components 功能描述: |
| 2SK2777(Q) | 制造商:Toshiba America Electronic Components 功能描述:Trans MOSFET N-CH 600V 6A 3-Pin(3+Tab) TO-220FL 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-CH 600V 6A TO220FL |
| 2SK2777(SM,Q) | 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-CH 600V 6A TO220SM |
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