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參數資料
| 型號： | HN7G10FE |
| 廠商： | Toshiba Corporation |
| 英文描述： | Power Management Switch Applications |
| 中文描述： | 電源管理開關應用 |
| 文件頁數： | 1/7頁 |
| 文件大小： | 503K |
| 代理商： | HN7G10FE |
HN7G10FE
2007-11-01
1
TOSHIBA Multichip Discrete Device
HN7G10FE
Power Management Switch Applications
Driver Circuit Applications
Interface Circuit Applications
Q1 (transistor): 2SC5376F equivalent
Q2 (MOSFET): SSM3K03FE equivalent
Q1
(transistor)
Absolute Maximum Ratings
(Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Collector-base voltage
V
CBO
15
V
Collector-emitter voltage
V
CEO
12
V
Emitter-base voltage
V
EBO
5
V
Collector current
I
C
400
mA
Base current
I
B
50
mA
Q2
(MOSFET)
Absolute Maximum Ratings
(Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain-source voltage
V
DS
20
V
Gate-source voltage
V
GSS
10
V
Drain current
I
D
50
mA
Q1, Q2 Common Ratings
(Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Power dissipation
P
C
(Note 1)
100
mW
Junction temperature
T
j
150
°C
Storage temperature range
T
stg
55~150
°C
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Total rating
Marking
Pin Assignment
(top view)
Unit: mm
1.
2.
3.
4.
5.
6.
EMITTER
BASE
DRAIN
SOURCE
GATE
COLLECTOR
JEDEC
―
JEITA
―
TOSHIBA
2-2J1A
Weight: 0.003 g (typ.)
78A
Type Name
h
FE
Rank
6
5
4
1
2
3
Q1
Q2
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