- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄375858 > FMBSA06 (FAIRCHILD SEMICONDUCTOR CORP) NPN General Purpose Amplifier PDF資料下載
參數(shù)資料
| 型號(hào)： | FMBSA06 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類(lèi)： | 小信號(hào)晶體管 |
| 英文描述： | NPN General Purpose Amplifier |
| 中文描述： | 500 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | SUPERSOT-6, 6 PIN |
| 文件頁(yè)數(shù)： | 2/5頁(yè) |
| 文件大小： | 97K |
| 代理商： | FMBSA06 |
2004 Fairchild Semiconductor Corporation
Rev. A1, November 2004
F
Typical Characteristics
Figure 1. Typical Pulsed Current Gain
vs Collector Current
Figure 2. Collector-Emitter Saturation Voltage
vs Collector Current
Figure 3. Base-Emitter Saturation Voltage
vs Collector Current
Figure 4. Base-Emitter On Voltage
vs Collector Current
Figure 5. Collector Cutoff Current
vs Ambient Temperature
Figure 6. Collector Saturation Region
vs Collector Current
0.001
0.01
0.1
50
100
150
200
I - COLLECTOR CURRENT (A)
h
F
- 40 °C
25 °C
V = 1V
125 °C
Collector-Emitter Saturation
Voltage vs Collector Current
0.1
1
10
100
1000
0
0.1
0.2
0.3
0.4
0.5
I - COLLECTOR CURRENT (mA)
V
C
β
= 10
- 40
°
C
25
°
C
125
°
C
Voltage vs Collector Current
0.1
1
10
100
1000
0.4
0.6
0.8
1
I - COLLECTOR CURRENT (mA)
V
B
β
= 10
- 40
°
C
25
°
C
125
°
C
β
Collector Current
1
10
100
1000
0
0.2
0.4
0.6
0.8
1
I - COLLECTOR CURRENT (mA)
V
B
V = 5V
- 40
°
C
25
°
C
125
°
C
β
25
50
75
100
125
0.001
0.01
0.1
1
10
T - AMBIENT TEMPERATURE ( C)
I
C
V = 80 V
Collector Saturation Region
4000
10000
20000
30000
50000
0
0.5
1
1.5
2
I - BASE CURRENT (uA)
V
10 mA
100 mA
1 mA
TA
°
C
I =
C
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| FMBSA56 | PNP General Purpose Amplifier |
| FMBT3906 | PNP EPITAXIAL PLANAR TRANSISTOR |
| FMC2122C6-03 | Ku K-Brand Power GaAs Modules |
| FMC2122LN-03 | Ku K-Brand Power GaAs Modules |
| FMC2122P1-02 | Ku K-Brand Power GaAs Modules |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FMBSA56 | 功能描述:兩極晶體管 - BJT Amplifier PNP General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| FMBSS84 | 制造商:FORMOSA 制造商全稱(chēng):Formosa MS 功能描述:50V P-Channel Enhancement Mode Power MOSFET |
| FMBT1015 | 制造商:FCI 制造商全稱(chēng):First Components International 功能描述:PNP Epitaxial Planar Transistor Collector - Emitter Voltage VCEO |
| FMBT1815 | 制造商:FCI 制造商全稱(chēng):First Components International 功能描述:NPN Epitaxial Planar Transistor Collector - Emitter Voltage VCEO |
| FMBT2222 | 制造商:FORMOSA 制造商全稱(chēng):Formosa MS 功能描述:600mA Silicon NPN Epitaxial Planar Transistor |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。