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參數資料
型號: IDT54FCT3827ASOB
廠商: Integrated Device Technology, Inc.
英文描述: 3.3V CMOS 10-BIT BUFFERS
中文描述: 3.3V的CMOS 10位緩沖器
文件頁數: 1/7頁
文件大小: 102K
代理商: IDT54FCT3827ASOB
Integrated Device Technology, Inc.
IDT54/74FCT3827A/B
3.3V CMOS 10-BIT
BUFFERS
The IDT logo is a registered trademark of Integrated Device Technology, Inc.
MILITARY AND COMMERCIAL TEMPERATURE RANGES
1
AUGUST 1995
1995 Integrated Device Technology, Inc.
8.15
DSC-4651/-
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FUNCTIONAL BLOCK DIAGRAM
3092 drw 01
FEATURES:
0.5 MICRON CMOS Technology
ESD > 2000V per MIL-STD-883, Method 3015;
> 200V using machine model (C = 200pF, R = 0)
25 mil Center SSOP Packages
Extended commercial range of -40
°
C to +85
°
C
V
CC
= 3.3V
±
0.3V, Normal Range or
V
CC
= 2.7V to 3.6V, Extended Range
CMOS power levels (0.4
μ
W typ. static)
Rail-to-Rail output swing for increased noise margin
Military product compliant to MIL-STD-883, Class B
DESCRIPTION:
The FCT3827A/B 10-bit bus drivers are built using an
advanced dual metal CMOS technology. These high speed,
low power buffers are ideal for high-performance bus interface
buffering for wide data/address paths or buses carrying parity.
The 10-bit buffers have NAND-ed output enables for maxi-
mum control flexibility.
All of the FCT3827 high performance interface compo-
nents are designed for high-capacitance load drive capability,
while providing low-capacitance bus loading at both inputs
and outputs.
相關PDF資料
PDF描述
IDT54FCT3827B 3.3V CMOS 10-BIT BUFFERS
IDT54FCT3827BD 3.3V CMOS 10-BIT BUFFERS
IDT54FCT3827BP 3.3V CMOS 10-BIT BUFFERS
IDT54FCT3827BPY Ceramic Chip Capacitors / MIL-PRF-55681; Capacitance [nom]: 8200pF; Working Voltage (Vdc)[max]: 100V; Capacitance Tolerance: +/-10%; Dielectric: Multilayer Ceramic; Temperature Coefficient: C0G (NP0); Lead Style: Surface Mount Chip; Lead Dimensions: 2225; Termination: Sn60 Coated; Body Dimensions: 0.225" x 0.250" x 0.080"; Container: Bag; Features: MIL-PRF-55681: S Failure Rate
IDT54FCT3827BPYB 3.3V CMOS 10-BIT BUFFERS
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