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參數資料
| 型號： | IDT6116LA25P |
| 廠商： | INTEGRATED DEVICE TECHNOLOGY INC |
| 元件分類： | DRAM |
| 英文描述： | Dual Enhanced JFET Low-Power Precision Operational Amplifier 8-PDIP 0 to 70 |
| 中文描述： | 2K X 8 STANDARD SRAM, 25 ns, PDIP24 |
| 封裝： | 0.600 INCH, PLASTIC, DIP-24 |
| 文件頁數： | 1/10頁 |
| 文件大小： | 91K |
| 代理商： | IDT6116LA25P |
Integrated Device Technology, Inc.
MILITARY AND COMMERCIAL TEMPERATURE RANGES
MARCH 1996
1996 Integrated Device Technology, Inc.
For latest information contact IDT's web site at www.idt.com or fax-on-demand at 408-492-8391.
5.1
3089/1
1
The IDT logo is aregistered trademark of Integrated Device Technology, Inc.
FEATURES:
High-speed access and chip select times
— Military: 20/25/35/45/55/70/90/120/150ns (max.)
— Commercial: 15/20/25/35/45ns (max.)
Low-power consumption
Battery backup operation
— 2V data retention voltage (LA version only)
Produced with advanced CMOS high-performance
technology
CMOS process virtually eliminates alpha particle
soft-error rates
Input and output directly TTL-compatible
Static operation: no clocks or refresh required
Available in ceramic and plastic 24-pin DIP, 24-pin Thin
Dip and 24-pin SOIC and 24-pin SOJ
Military product compliant to MIL-STD-833, Class B
DESCRIPTION:
The IDT6116SA/LA is a 16,384-bit high-speed static RAM
organized as 2K x 8. It is fabricated using IDT's high-perfor-
mance, high-reliability CMOS technology.
Access times as fast as 15ns are available. The circuit also
offers a reduced power standby mode. When
CS
goes HIGH,
the circuit will automatically go to, and remain in, a standby
power mode, as long as
CS
remains HIGH. This capability
provides significant system level power and cooling savings.
The low-power (LA) version also offers a battery backup data
retention capability where the circuit typically consumes only
1
μ
W to 4
μ
W operating off a 2V battery.
All inputs and outputs of the IDT6116SA/LA are TTL-
compatible. Fully static asynchronous circuitry is used, requir-
ing no clocks or refreshing for operation.
The IDT6116SA/LA is packaged in 24-pin 600 and 300 mil
plastic or ceramic DIP and a 24-lead gull-wing SOIC, and a 24
-lead J-bend SOJ providing high board-level packing densi-
ties.
Military grade product is manufactured in compliance to the
latest version of MIL-STD-883, Class B, making it ideally
suited to military temperature applications demanding the
highest level of performance and reliability.
FUNCTIONAL BLOCK DIAGRAM
CS
OE
WE
A
0
A
10
I/O
0
I/O
7
128 X 128
MEMORY
ARRAY
I/O CONTROL
ADDRESS
DECODER
INPUT
DATA
CIRCUIT
CONTROL
CIRCUIT
GND
3089 drw 01
V
CC
IDT6116SA
IDT6116LA
CMOS STATIC RAM
16K (2K x 8 BIT)
相關PDF資料 |
PDF描述 |
|---|---|
| IDT6116LA25TPB | Dual Enhanced JFET Low-Power Precision Operational Amplifier 8-PDIP 0 to 70 |
| IDT6116LA25Y | Dual Enhanced JFET Low-Power Precision Operational Amplifier 8-SO 0 to 70 |
| IDT6116LA35D | Dual Enhanced JFET Low-Power Precision Operational Amplifier 8-SO 0 to 70 |
| IDT6116LA35DB | Dual Enhanced JFET Low-Power Precision Operational Amplifier 8-SO 0 to 70 |
| IDT6116LA35P | CMOS STATIC RAM 16K (2K x 8 BIT) |
相關代理商/技術參數 |
參數描述 |
|---|---|
| IDT6116LA25PB | 制造商:IDT 制造商全稱:Integrated Device Technology 功能描述:CMOS STATIC RAM 16K (2K x 8 BIT) |
| IDT6116LA25PI | 制造商:IDT 制造商全稱:Integrated Device Technology 功能描述:CMOS STATIC RAM 16K (2K x 8 BIT) |
| IDT6116LA25SO | 功能描述:IC SRAM 16KBIT 25NS 24SOIC RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 產品變化通告:Product Discontinuation 26/Apr/2010 標準包裝:136 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 同步，DDR II 存儲容量:18M（1M x 18） 速度:200MHz 接口:并聯 電源電壓:1.7 V ~ 1.9 V 工作溫度:0°C ~ 70°C 封裝/外殼:165-TBGA 供應商設備封裝:165-CABGA（13x15） 包裝:托盤 其它名稱:71P71804S200BQ |
| IDT6116LA25SO8 | 功能描述:IC SRAM 16KBIT 25NS 24SOIC RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 產品變化通告:Product Discontinuation 26/Apr/2010 標準包裝:136 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 同步，DDR II 存儲容量:18M（1M x 18） 速度:200MHz 接口:并聯 電源電壓:1.7 V ~ 1.9 V 工作溫度:0°C ~ 70°C 封裝/外殼:165-TBGA 供應商設備封裝:165-CABGA（13x15） 包裝:托盤 其它名稱:71P71804S200BQ |
| IDT6116LA25SOB | 制造商:IDT 制造商全稱:Integrated Device Technology 功能描述:CMOS STATIC RAM 16K (2K x 8 BIT) |
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