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參數資料
| 型號： | IDT6167LA55DB |
| 廠商： | INTEGRATED DEVICE TECHNOLOGY INC |
| 元件分類： | DRAM |
| 英文描述： | Enhanced-JFET Precision Dual Operational Amplifier 8-SOIC 0 to 70 |
| 中文描述： | 16K X 1 STANDARD SRAM, 55 ns, CDIP20 |
| 封裝： | 0.300 INCH, CERDIP-20 |
| 文件頁數： | 1/8頁 |
| 文件大小： | 63K |
| 代理商： | IDT6167LA55DB |
Integrated Device Technology, Inc.
MILITARY AND COMMERCIAL TEMPERATURE RANGES
MARCH 1996
1996 Integrated Device Technology, Inc.
For latest information contact IDT's web site at www.idt.com or fax-on-demand at 408-492-8391.
2981/5
1
FEATURES:
High-speed (equal access and cycle time)
— Military: 15/20/25/35/45/55/70/85/100ns (max.)
— Commercial: 15/20/25/35ns (max.)
Low power consumption
Battery backup operation — 2V data retention voltage
(IDT6167LA only)
Available in 20-pin CERDIP and Plastic DIP, and 20-pin
SOJ
Produced with advanced CMOS high-performance
technology
CMOS process virtually eliminates alpha particle soft-
error rates
Separate data input and output
Military product compliant to MIL-STD-883, Class B
DESCRIPTION:
The lDT6167 is a 16,384-bit high-speed static RAM orga-
nized as 16K x 1. The part is fabricated using IDT’s high-
performance, high reliability CMOS technology.
Access times as fast as 15ns are available. The circuit also
offers a reduced power standby mode. When
CS
goes HIGH,
the circuit will automatically go to, and remain in, a standby
mode as long as
CS
remains HIGH. This capability provides
significant system-level power and cooling savings. The low-
power (LA) version also offers a battery backup data retention
capability where the circuit typically consumes only 1
μ
W
operating off a 2V battery.
All inputs and the output of the IDT6167 are TTL-compat-
ible and operate from a single 5V supply, thus simplifying
system designs.
The IDT6167 is packaged in a space-saving 20-pin, 300 mil
Plastic DIP or CERDIP, Plastic 20-pin SOJ, providing high
board-level packing densities.
Military grade product is manufactured in compliance with
the latest revision of MIL-STD-883, Class B, making it ideally
suited to military temperature applications demanding the
highest level of performance and reliability.
The IDT logo is a registered trademark of Integrated Device Technology, Inc.
FUNCTIONAL BLOCK DIAGRAM
ADDRESS
DECODE
16,384-BIT
MEMORY ARRAY
2981 drw 01
WE
V
CC
GND
D
OUT
A
0
A
13
D
IN
I/O CONTROL
CS
CONTROL
LOGIC
5.2
CMOS STATIC RAM
16K (16K x 1-BIT)
IDT6167SA
IDT6167LA
相關PDF資料 |
PDF描述 |
|---|---|
| IDT6167LA55P | Enhanced-JFET Precision Dual Operational Amplifier 8-PDIP 0 to 70 |
| IDT6167LA55PB | Enhanced-JFET Precision Dual Operational Amplifier 8-PDIP 0 to 70 |
| IDT6167LA55Y | Enhanced-JFET Precision Dual Operational Amplifier 8-SOIC -40 to 85 |
| IDT6167LA70D | Enhanced-JFET Precision Dual Operational Amplifier 8-SOIC -40 to 85 |
| IDT6167LA70DB | Enhanced-JFET Precision Dual Operational Amplifier 8-SOIC -40 to 85 |
相關代理商/技術參數 |
參數描述 |
|---|---|
| IDT6167LA55EB | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x1 SRAM |
| IDT6167LA55P | 制造商:IDT 制造商全稱:Integrated Device Technology 功能描述:CMOS STATIC RAM 16K (16K x 1-BIT) |
| IDT6167LA55PB | 制造商:IDT 制造商全稱:Integrated Device Technology 功能描述:CMOS STATIC RAM 16K (16K x 1-BIT) |
| IDT6167LA55Y | 制造商:IDT 制造商全稱:Integrated Device Technology 功能描述:CMOS STATIC RAM 16K (16K x 1-BIT) |
| IDT6167LA55YB | 制造商:IDT 制造商全稱:Integrated Device Technology 功能描述:CMOS STATIC RAM 16K (16K x 1-BIT) |
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