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參數資料
| 型號： | IDT70V38L15PFI |
| 廠商： | Integrated Device Technology, Inc. |
| 英文描述： | HIGH-SPEED 3.3V 64K x 18 DUAL-PORT STATIC RAM |
| 中文描述： | 高速3.3 64K的× 18 DUAL-PORT靜態RAM |
| 文件頁數： | 1/17頁 |
| 文件大小： | 260K |
| 代理商： | IDT70V38L15PFI |
2003 Integrated Device Technology, Inc.
1
SEPTEMBER 2003
DSC-4850/3
I/O
Control
Address
Decoder
64Kx18
MEMORY
ARRAY
70V38
ARBITRATION
INTERRUPT
SEMAPHORE
LOGIC
CE
0L
CE
1L
OE
L
R/
W
L
A
15L
A
0L
SEM
L
INT
L
(2)
BUSY
L
(1,2)
LB
L
CE
0L
CE
1L
OE
L
UB
L
I/O
Control
Address
Decoder
CE
0R
CE
1R
OE
R
R/
W
R
A
15R
A
0R
SEM
R
INT
R
(2)
BUSY
R
(1,2)
LB
R
R/
W
R
UB
R
OE
R
M/
S
(1)
CE
0R
CE
1R
4850 drw 01
I/O
9-17L
I/O
0-8R
I/O
9-17R
I/O
0-8L
R/
W
L
.
16
16
Functional Block Diagram
◆
M/
S
= V
IH
for
BUSY
output flag on Master,
M/
S
= V
IL
for
BUSY
input on Slave
◆
Busy and Interrupt Flags
◆
On-chip port arbitration logic
◆
Full on-chip hardware support of semaphore signaling
between ports
◆
Fully asynchronous operation from either port
◆
Separate upper-byte and lower-byte controls for multi-
plexed bus and bus matching compatibility
◆
LVTTL-compatible, single 3.3V (±0.3V) power supply
◆
Available in a 100-pin TQFP
◆
Industrial temperature range (–40°C to +85°C) is available
for selected speeds
Features
◆
True Dual-Ported memory cells which allow simultaneous
access of the same memory location
◆
High-speed access
– Commercial: 15/20ns (max.)
– Industrial: 20ns (max.)
◆
Low-power operation
– IDT70V38L
Active: 440mW (typ.)
Standby: 660μW (typ.)
◆
Dual chip enables allow for depth expansion without
external logic
◆
IDT70V38 easily expands data bus width to 36 bits or
more using the Master/Slave select when cascading more
than one device
HIGH-SPEED 3.3V
64K x 18 DUAL-PORT
STATIC RAM
IDT70V38L
NOTES:
1.
2.
BUSY
is an input as a Slave (M/
S
=V
IL
) and an output when it is a Master (M/
S
=V
IH
).
BUSY
and
INT
are non-tri-state totem-pole outputs (push-pull).
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相關代理商/技術參數 |
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| IDT70V38L20PF | 功能描述:IC SRAM 1.125MBIT 20NS 100TQFP RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:1,000 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 雙端口，同步 存儲容量:1.125M（32K x 36） 速度:5ns 接口:并聯 電源電壓:3.15 V ~ 3.45 V 工作溫度:-40°C ~ 85°C 封裝/外殼:256-LBGA 供應商設備封裝:256-CABGA（17x17） 包裝:帶卷 (TR) 其它名稱:70V3579S5BCI8 |
| IDT70V38L20PF8 | 功能描述:IC SRAM 1.125MBIT 20NS 100TQFP RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:1,000 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 雙端口，同步 存儲容量:1.125M（32K x 36） 速度:5ns 接口:并聯 電源電壓:3.15 V ~ 3.45 V 工作溫度:-40°C ~ 85°C 封裝/外殼:256-LBGA 供應商設備封裝:256-CABGA（17x17） 包裝:帶卷 (TR) 其它名稱:70V3579S5BCI8 |
| IDT70V38L20PFGI | 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 1.125MBIT 20NS 100TQFP |
| IDT70V38L20PFGI8 | 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 1.125MBIT 20NS 100TQFP |
| IDT70V38L20PFI | 功能描述:IC SRAM 1.125MBIT 20NS 100TQFP RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:3,000 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:8K (1K x 8) 速度:400kHz 接口:I²C，2 線串口 電源電壓:1.7 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-SOIC（0.154"，3.90mm 寬） 供應商設備封裝:8-SOIC 包裝:帶卷 (TR) |
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