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參數(shù)資料
| 型號： | IDT70V631S10BC |
| 廠商： | INTEGRATED DEVICE TECHNOLOGY INC |
| 元件分類： | DRAM |
| 英文描述： | HIGH-SPEED 3.3V 256K x 18 ASYNCHRONOUS DUAL-PORT STATIC RAM |
| 中文描述： | 256K X 18 DUAL-PORT SRAM, 10 ns, PBGA256 |
| 封裝： | 17 X 17 MM, 1.40 MM HEIGHT, 1 MM PITCH, BGA-256 |
| 文件頁數(shù)： | 1/23頁 |
| 文件大?。?/td> | 306K |
| 代理商： | IDT70V631S10BC |
2003 Integrated Device Technology, Inc.
1
OCTOBER 2003
DSC-5622/5
Functional Block Diagram
UB
L
◆
Fully asynchronous operation from either port
◆
Separate byte controls for multiplexed bus and bus
matching compatibility
◆
Supports JTAG features compliant to IEEE 1149.1
– Due to limited pin count, JTAG is not supported on the
128-pin TQFP package.
◆
LVTTL-compatible, single 3.3V (±150mV) power supply for
core
◆
LVTTL-compatible, selectable 3.3V (±150mV)/2.5V (±100mV)
power supply for I/Os and control signals on each port
◆
Available in a 128-pin Thin Quad Flatpack, 208-ball fine
pitch Ball Grid Array, and 256-ball Ball Grid Array
◆
Industrial temperature range (–40°C to +85°C) is available
for selected speeds
Features
◆
True Dual-Port memory cells which allow simultaneous
access of the same memory location
◆
High-speed access
– Commercial: 10/12/15ns (max.)
– Industrial: 12ns (max.)
◆
Dual chip enables allow for depth expansion without
external logic
◆
IDT70V631 easily expands data bus width to 36 bits or
more using the Master/Slave select when cascading more
than one device
◆
M/
S
= V
IH
for
BUSY
output flag on Master,
M/
S
= V
IL
for
BUSY
input on Slave
◆
Busy and Interrupt Flags
◆
On-chip port arbitration logic
◆
Full on-chip hardware support of semaphore signaling
between ports
HIGH-SPEED 3.3V 256K x 18
ASYNCHRONOUS DUAL-PORT
STATIC RAM
IDT70V631S
NOTES:
1.
2.
BUSY
is an input as a Slave (M/
S
=V
IL
) and an output when it is a Master (M/
S
=V
IH
).
BUSY
and
INT
are non-tri-state totem-pole outputs (push-pull).
CE
0R
CE
1R
R/
W
R
LB
R
UB
R
256K x 18
MEMORY
ARRAY
Address
Decoder
A
17R
A
0R
Address
Decoder
CE
0L
CE
1L
R/
W
L
LB
L
Dout0-8_L
Dout9-17_L
Dout0-8_R
Dout9-17_R
B
E
0
L
B
E
1
L
B
E
1
R
B
E
0
R
I/O
0L
- I/O
17L
I/O
0R
- I/O
17R
Din_L
ADDR_L
Din_R
ADDR_R
OE
R
OE
L
ARBITRATION
INTERRUPT
SEMAPHORE
LOGIC
SEM
L
INT
L
BUSY
L
M/
S
R/
W
L
OE
L
R/
W
R
OE
R
BUSY
R
SEM
R
INT
R
CE
0L
CE
1L
CE
0R
CE
1R
TMS
TCK
TRST
TDI
TDO
JTAG
5622 drw 01
A
17L
A
0L
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| IDT70V631S10BC8 | 功能描述:IC SRAM 4MBIT 10NS 256BGA RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:3,000 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:8K (1K x 8) 速度:400kHz 接口:I²C，2 線串口 電源電壓:1.7 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-SOIC（0.154"，3.90mm 寬） 供應(yīng)商設(shè)備封裝:8-SOIC 包裝:帶卷 (TR) |
| IDT70V631S10BCG | 功能描述:IC SRAM 4MBIT 10NS 256BGA RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:3,000 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:8K (1K x 8) 速度:400kHz 接口:I²C，2 線串口 電源電壓:1.7 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-SOIC（0.154"，3.90mm 寬） 供應(yīng)商設(shè)備封裝:8-SOIC 包裝:帶卷 (TR) |
| IDT70V631S10BCG8 | 功能描述:IC SRAM 4MBIT 10NS 256BGA RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:3,000 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:8K (1K x 8) 速度:400kHz 接口:I²C，2 線串口 電源電壓:1.7 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-SOIC（0.154"，3.90mm 寬） 供應(yīng)商設(shè)備封裝:8-SOIC 包裝:帶卷 (TR) |
| IDT70V631S10BF | 功能描述:IC SRAM 4MBIT 10NS 208FBGA RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:3,000 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:8K (1K x 8) 速度:400kHz 接口:I²C，2 線串口 電源電壓:1.7 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-SOIC（0.154"，3.90mm 寬） 供應(yīng)商設(shè)備封裝:8-SOIC 包裝:帶卷 (TR) |
| IDT70V631S10BF8 | 功能描述:IC SRAM 4MBIT 10NS 208FBGA RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:3,000 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:8K (1K x 8) 速度:400kHz 接口:I²C，2 線串口 電源電壓:1.7 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-SOIC（0.154"，3.90mm 寬） 供應(yīng)商設(shè)備封裝:8-SOIC 包裝:帶卷 (TR) |
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