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參數資料
| 型號： | IDT71256SA20Y |
| 廠商： | INTEGRATED DEVICE TECHNOLOGY INC |
| 元件分類： | DRAM |
| 英文描述： | CMOS STATIC RAM 256K (32K x 8-BIT) |
| 中文描述： | 32K X 8 STANDARD SRAM, 20 ns, PDSO28 |
| 封裝： | 0.300 INCH, PLASTIC, SOJ-28 |
| 文件頁數： | 1/9頁 |
| 文件大?。?/td> | 78K |
| 代理商： | IDT71256SA20Y |
Integrated Device Technology, Inc.
MILITARY AND COMMERCIAL TEMPERATURE RANGES
AUGUST 1996
1996 Integrated Device Technology, Inc.
DSC-2946/7
1
The IDT logo is a registered trademark of Integrated Device Technology, Inc.
FEATURES:
High-speed address/chip select time
— Military: 25/30/35/45/55/70/85/100/120/150ns (max.)
— Commercial: 20/25/35/45ns (max.) Low Power only.
Low-power operation
Battery Backup operation — 2V data retention
Produced with advanced high-performance CMOS
technology
Input and output directly TTL-compatible
Available in standard 28-pin (300 or 600 mil) ceramic
DIP, 28-pin (600 mil) plastic DIP, 28-pin (300 mil) SOJ
and 32-pin LCC
Military product compliant to MIL-STD-883, Class B
DESCRIPTION:
The IDT71256 is a 262,144-bit high-speed static RAM
organized as 32K x 8. It is fabricated using IDT’s high-
performance, high-reliability CMOS technology.
Address access times as fast as 20ns are available with
power consumption of only 350mW (typ.). The circuit also
offers a reduced power standby mode. When
CS
goes HIGH,
the circuit will automatically go to, and remain in, a low-power
standby mode as long as
CS
remains HIGH. In the full standby
mode, the low-power device consumes less than 15
μ
W,
typically. This capability provides significant system level
power and cooling savings. The low-power (L) version also
offers a battery backup data retention capability where the
circuit typically consumes only 5
μ
W when operating off a 2V
battery.
The lDT71256 is packaged in a 28-pin (300 or 600 mil)
ceramic DIP, a 28-pin 300 mil J-bend SOlC, and a 28-pin (600
mil) plastic DIP, and 32-pin LCC providing high board-level
packing densities.
The IDT71256 military RAM is manufactured in compliance
with the latest revision of MIL-STD-883, Class B, making it
ideally suited to military temperature applications demanding
the highest level of performance and reliability.
FUNCTIONAL BLOCK DIAGRAM
A
ADDRESS
DECODER
262,144 BIT
MEMORY ARRAY
I/O CONTROL
2946 drw 01
INPUT
DATA
CIRCUIT
WE
CS
OE
V
CC
GND
0
A
14
I/O
0
I/O
7
CONTROL
CIRCUIT
7.2
CMOS STATIC RAM
256K (32K x 8-BIT)
IDT71256S
IDT71256L
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相關代理商/技術參數 |
參數描述 |
|---|---|
| IDT71256SA20Y8 | 功能描述:IC SRAM 256KBIT 20NS 28SOJ RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 產品變化通告:Product Discontinuation 26/Apr/2010 標準包裝:136 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 同步，DDR II 存儲容量:18M（1M x 18） 速度:200MHz 接口:并聯 電源電壓:1.7 V ~ 1.9 V 工作溫度:0°C ~ 70°C 封裝/外殼:165-TBGA 供應商設備封裝:165-CABGA（13x15） 包裝:托盤 其它名稱:71P71804S200BQ |
| IDT71256SA20YG | 功能描述:IC SRAM 256KBIT 20NS 28SOJ RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:2,500 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:1K (128 x 8) 速度:100kHz 接口:UNI/O?（單線） 電源電壓:1.8 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-TSSOP，8-MSOP（0.118"，3.00mm 寬） 供應商設備封裝:8-MSOP 包裝:帶卷 (TR) |
| IDT71256SA20YG8 | 功能描述:IC SRAM 256KBIT 20NS 28SOJ RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:1 系列:- 格式 - 存儲器:閃存 存儲器類型:閃存 - NAND 存儲容量:4G（256M x 16） 速度:- 接口:并聯 電源電壓:2.7 V ~ 3.6 V 工作溫度:0°C ~ 70°C 封裝/外殼:48-TFSOP（0.724"，18.40mm 寬） 供應商設備封裝:48-TSOP I 包裝:Digi-Reel® 其它名稱:557-1461-6 |
| IDT71256SA20YGI | 功能描述:IC SRAM 256KBIT 20NS 28SOJ RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:2,500 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:1K (128 x 8) 速度:100kHz 接口:UNI/O?（單線） 電源電壓:1.8 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-TSSOP，8-MSOP（0.118"，3.00mm 寬） 供應商設備封裝:8-MSOP 包裝:帶卷 (TR) |
| IDT71256SA20YGI8 | 功能描述:IC SRAM 256KBIT 20NS 28SOJ RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:60 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:16K (2K x 8) 速度:2MHz 接口:SPI 3 線串行 電源電壓:2.5 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-DIP（0.300"，7.62mm） 供應商設備封裝:8-PDIP 包裝:管件 產品目錄頁面:1449 (CN2011-ZH PDF) |
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