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參數資料
| 型號： | IDT7134SA55C |
| 廠商： | INTEGRATED DEVICE TECHNOLOGY INC |
| 元件分類： | DRAM |
| 英文描述： | HIGH-SPEED 4K x 8 DUAL-PORT STATIC RAM |
| 中文描述： | 4K X 8 DUAL-PORT SRAM, 55 ns, CDIP48 |
| 封裝： | SIDE BRAZED, CERAMIC, DIP-48 |
| 文件頁數： | 1/9頁 |
| 文件大?。?/td> | 110K |
| 代理商： | IDT7134SA55C |
Integrated Device Technology, Inc.
MILITARY AND COMMERCIAL TEMPERATURE RANGES
OCTOBER 1996
1996 Integrated Device Technology, Inc.
DSC-2720/4
1
IDT7134SA/LA
HIGH-SPEED
4K x 8 DUAL-PORT
STATIC RAM
FEATURES:
High-speed access
— Military: 25/35/45/55/70ns (max.)
— Commercial: 20/25/35/45/55/70ns (max.)
Low-power operation
— IDT7134SA
Active: 500mW (typ.)
Standby: 5mW (typ.)
— IDT7134LA
Active: 500mW (typ.)
Standby: 1mW (typ.)
Fully asynchronous operation from either port
Battery backup operation—2V data retention
TTL-compatible; single 5V (
±
10%) power supply
Available in several popular hermetic and plastic packages
Military product compliant to MIL-STD-883, Class B
Industrial temperature range (–40
°
C to +85
°
C) is available,
tested to military electrical specifications
DESCRIPTION:
The IDT7134 is a high-speed 4K x 8 Dual-Port Static RAM
designed to be used in systems where on-chip hardware port
arbitration is not needed. This part lends itself to those
systems which cannot tolerate wait states or are designed to
be able to externally arbitrate or withstand contention when
both sides simultaneously access the same Dual-Port RAM
location.
The IDT7134 provides two independent ports with separate
control, address, and I/O pins that permit independent,
asynchronous access for reads or writes to any location in
memory. It is the user’s responsibility to ensure data integrity
when simultaneously accessing the same memory location
from both ports. An automatic power down feature, controlled
by
CE
, permits the on-chip circuitry of each port to enter a very
low standby power mode.
Fabricated using IDT’s CMOS high-performance
technology, these Dual-Port typically on only 500mW of
power. Low-power (LA) versions offer battery backup data
retention capability, with each port typically consuming 200
μ
W
from a 2V battery.
The IDT7134 is packaged on either a sidebraze or plastic
48-pin DIP, 48-pin LCC, 52-pin PLCC and 48-pin Ceramic
Flatpack. Military grade product is manufactured in compliance
with the latest revision of MIL-STD-883, Class B, making it
ideally suited to military temperature applications demanding
the highest level of performance and reliability.
The IDT logo is a registered trademark of Integrated Device Technology, Inc.
FUNCTIONAL BLOCK DIAGRAM
For latest information contact IDT’s web site at www.idt.com or fax-on-demand at 408-492-8391.
6.04
COLUMN
I/O
COLUMN
I/O
MEMORY
ARRAY
LEFT SIDE
ADDRESS
DECODE
LOGIC
RIGHT SIDE
ADDRESS
DECODE
LOGIC
R/
W
L
CE
L
OE
L
A
0L
- A
11L
I/O
0L
- I/O
7L
2720 drw 01
A
0R
- A
11R
I/O
0R
- I/O
7R
OE
R
CE
R
R/
W
R
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相關代理商/技術參數 |
參數描述 |
|---|---|
| IDT7134SA55CB | 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 32KBIT 55NS SB48 |
| IDT7134SA55J | 功能描述:IC SRAM 32KBIT 55NS 52PLCC RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:2,000 系列:MoBL® 格式 - 存儲器:RAM 存儲器類型:SRAM - 異步 存儲容量:16M（2M x 8，1M x 16） 速度:45ns 接口:并聯 電源電壓:2.2 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-VFBGA 供應商設備封裝:48-VFBGA（6x8） 包裝:帶卷 (TR) |
| IDT7134SA55J8 | 功能描述:IC SRAM 32KBIT 55NS 52PLCC RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:2,000 系列:MoBL® 格式 - 存儲器:RAM 存儲器類型:SRAM - 異步 存儲容量:16M（2M x 8，1M x 16） 速度:45ns 接口:并聯 電源電壓:2.2 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-VFBGA 供應商設備封裝:48-VFBGA（6x8） 包裝:帶卷 (TR) |
| IDT7134SA55JG | 功能描述:IC SRAM 32KBIT 55NS 52PLCC RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:72 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 同步 存儲容量:9M（256K x 36） 速度:75ns 接口:并聯 電源電壓:3.135 V ~ 3.465 V 工作溫度:-40°C ~ 85°C 封裝/外殼:100-LQFP 供應商設備封裝:100-TQFP（14x14） 包裝:托盤 其它名稱:71V67703S75PFGI |
| IDT7134SA55JG8 | 功能描述:IC SRAM 32KBIT 55NS 52PLCC RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:2,000 系列:MoBL® 格式 - 存儲器:RAM 存儲器類型:SRAM - 異步 存儲容量:16M（2M x 8，1M x 16） 速度:45ns 接口:并聯 電源電壓:2.2 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-VFBGA 供應商設備封裝:48-VFBGA（6x8） 包裝:帶卷 (TR) |
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