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參數(shù)資料
| 型號(hào)： | IDT7164L35TP |
| 廠商： | INTEGRATED DEVICE TECHNOLOGY INC |
| 元件分類： | DRAM |
| 英文描述： | CMOS STATIC RAM 64K (8K x 8-BIT) |
| 中文描述： | 8K X 8 STANDARD SRAM, 35 ns, PDIP28 |
| 封裝： | 0.300 INCH, PLASTIC, DIP-28 |
| 文件頁(yè)數(shù)： | 1/9頁(yè) |
| 文件大小： | 104K |
| 代理商： | IDT7164L35TP |
Integrated Device Technology, Inc.
MILITARY AND COMMERCIAL TEMPERATURE RANGES
MAY 1996
1996 Integrated Device Technology, Inc.
For latest information contact IDT's web site at www.idt.com or fax-on-demand at 408-492-8391.
2967/8
1
The IDT logo is a registered trademark of Integrated Device Technology, Inc.
FEATURES:
High-speed address/chip select access time
— Military: 20/25/30/35/45/55/70/85ns (max.)
— Commercial: 15/20/25/35/70ns (max.)
Low power consumption
Battery backup operation — 2V data retention voltage
(L Version only)
Produced with advanced CMOS high-performance
technology
Inputs and outputs directly TTL-compatible
Three-state outputs
Available in:
— 28-pin DIP and SOJ
Military product compliant to MIL-STD-883, Class B
DESCRIPTION:
The IDT7164 is a 65,536 bit high-speed static RAM orga-
nized as 8K x 8. It is fabricated using IDT’s high-performance,
high-reliability CMOS technology.
Address access times as fast as 15ns are available and the
circuit offers a reduced power standby mode. When
CS
1
goes
HIGH or CS
2
goes LOW, the circuit will automatically go to,
and remain in, a low-power stand by mode. The low-power (L)
version also offers a battery backup data retention capability
at power supply levels as low as 2V.
All inputs and outputs of the IDT7164 are TTL-compatible
and operation is from a single 5V supply, simplifying system
designs. Fully static asynchronous circuitry is used, requiring
no clocks or refreshing for operation.
The IDT7164 is packaged in a 28-pin 300 mil DIP and SOJ;
and 28-pin 600 mil DIP.
Military grade product is manufactured in compliance with
the latest revision of MIL-STD-883, Class B, making it ideally
suited to military temperature applications demanding the
highest level of performance and reliability.
FUNCTIONAL BLOCK DIAGRAM
A
0
ADDRESS
DECODER
65,536 BIT
MEMORY ARRAY
I/O CONTROL
2967 drw 01
WE
CS
OE
V
CC
GND
I/O
0
I/O
7
CONTROL
LOGIC
2
CS
1
A
12
0
7
6.1
IDT7164S
IDT7164L
CMOS STATIC RAM
64K (8K x 8-BIT)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IDT7164L35TPB | CMOS STATIC RAM 64K (8K x 8-BIT) |
| IDT7164L35Y | CMOS STATIC RAM 64K (8K x 8-BIT) |
| IDT7164L35YB | CMOS STATIC RAM 64K (8K x 8-BIT) |
| IDT7164L45PB | CMOS STATIC RAM 64K (8K x 8-BIT) |
| IDT7164L45TD | CMOS STATIC RAM 64K (8K x 8-BIT) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IDT7164L35Y | 功能描述:IC SRAM 64KBIT 35NS 28SOJ RoHS:否 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 產(chǎn)品變化通告:Product Discontinuation 26/Apr/2010 標(biāo)準(zhǔn)包裝:136 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:SRAM - 同步，DDR II 存儲(chǔ)容量:18M（1M x 18） 速度:200MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.9 V 工作溫度:0°C ~ 70°C 封裝/外殼:165-TBGA 供應(yīng)商設(shè)備封裝:165-CABGA（13x15） 包裝:托盤 其它名稱:71P71804S200BQ |
| IDT7164L35YG | 功能描述:IC SRAM 64KBIT 35NS 28SOJ RoHS:是 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 產(chǎn)品變化通告:Product Discontinuation 26/Apr/2010 標(biāo)準(zhǔn)包裝:136 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:SRAM - 同步，DDR II 存儲(chǔ)容量:18M（1M x 18） 速度:200MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.9 V 工作溫度:0°C ~ 70°C 封裝/外殼:165-TBGA 供應(yīng)商設(shè)備封裝:165-CABGA（13x15） 包裝:托盤 其它名稱:71P71804S200BQ |
| IDT7164L35YG8 | 功能描述:IC SRAM 64KBIT 35NS 28SOJ RoHS:是 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 產(chǎn)品變化通告:Product Discontinuation 26/Apr/2010 標(biāo)準(zhǔn)包裝:136 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:SRAM - 同步，DDR II 存儲(chǔ)容量:18M（1M x 18） 速度:200MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.9 V 工作溫度:0°C ~ 70°C 封裝/外殼:165-TBGA 供應(yīng)商設(shè)備封裝:165-CABGA（13x15） 包裝:托盤 其它名稱:71P71804S200BQ |
| IDT7164L35YGI | 功能描述:IC SRAM 64KBIT 35NS 28SOJ RoHS:是 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 產(chǎn)品變化通告:Product Discontinuation 26/Apr/2010 標(biāo)準(zhǔn)包裝:136 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:SRAM - 同步，DDR II 存儲(chǔ)容量:18M（1M x 18） 速度:200MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.9 V 工作溫度:0°C ~ 70°C 封裝/外殼:165-TBGA 供應(yīng)商設(shè)備封裝:165-CABGA（13x15） 包裝:托盤 其它名稱:71P71804S200BQ |
| IDT7164L35YGI8 | 功能描述:IC SRAM 64KBIT 35NS 28SOJ RoHS:是 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 產(chǎn)品變化通告:Product Discontinuation 26/Apr/2010 標(biāo)準(zhǔn)包裝:136 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:SRAM - 同步，DDR II 存儲(chǔ)容量:18M（1M x 18） 速度:200MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.9 V 工作溫度:0°C ~ 70°C 封裝/外殼:165-TBGA 供應(yīng)商設(shè)備封裝:165-CABGA（13x15） 包裝:托盤 其它名稱:71P71804S200BQ |
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