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參數資料
| 型號： | IDT71P74104S200BQ |
| 廠商： | INTEGRATED DEVICE TECHNOLOGY INC |
| 元件分類： | DRAM |
| 英文描述： | 18Mb Pipelined QDR II SRAM Burst of 4 |
| 中文描述： | 2M X 9 QDR SRAM, 0.45 ns, PBGA165 |
| 封裝： | 13 X 15 MM, 1 MM PITCH, FBGA-165 |
| 文件頁數： | 1/22頁 |
| 文件大小： | 592K |
| 代理商： | IDT71P74104S200BQ |
MARCH 2004
DSC-6111/00
2003 Integrated Device Technology, Inc.
“QDR SRAMs and Quad Data Rate RAMs comprise a new family of products developed by Cypress Semiconductor, IDT, and Mcron Technology, Inc. “
1
18Mb Pipelined
QDRII SRAM
Burst of 4
Advance
Information
IDT71P74204
IDT71P74104
IDT71P74804
IDT71P74604
Features
N
18Mb Density (2Mx8, 2Mx9, 1Mx18, 512kx36)
Separate, Independent Read and Write Data Ports
-
Supports concurrent transactions
Dual Echo Clock Output
4-Word Burst on all SRAMaccesses
Multiplexed Address Bus One Read or One Write request
per clock cycle
DDR (Double Data Rate) Data Bus
-
Four word burst data per two clock cycles on
each port
-
Four word transfers per clock cycle
Depth expansion through Control Logic
HSTL (1.5V) inputs that can be scaled to receive signals
from1.4V to 1.9V.
Scalable output drivers
-
Can drive HSTL, 1.8V TTL or any voltage level
from1.4V to 1.9V.
-
Output Impedance adjustable from35 ohms to 70
ohms
1.8V Core Voltage (V
DD
)
165-ball, 1.0mmpitch, 15mmx 17mmfBGA Package
JTAG Interface
N
N
N
N
N
N
N
N
N
N
N
Description
The IDT QDRII
TM
Burst of four SRAMs are high-speed synchronous
memories with independent, double-data-rate (DDR), read and write
data ports. This scheme allows simultaneous read and write access for
the maximumdevice throughput, with four data items passed with each
read or write. Four data word transfers occur per clock cycle, providing
quad-data-rate (QDR) performance. Comparing this with standard SRAM
common I/O (CIO), single data rate (SDR) devices, a four to one in-
crease in data access is achieved at equivalent clock speeds. Consider-
ing that QDRII allows clock speeds in excess of standard SRAMde-
vices, the throughput can be increased well beyond four to one in most
applications.
Using independent ports for read and write data access, simplifies
systemdesign by elimnating the need for bi-directional buses. All buses
associated with the QDRII are unidirectional and can be optimzed for
signal integrity at very high bus speeds. The QDRII has scalable output
impedance on its data output bus and echo clocks, allowing the user to
tune the bus for low noise and high performance.
The QDRII has a single SDR address bus with read addresses and
write addresses multiplexed. The read and write addresses interleave
with each occurring a maximumof every other cycle. In the event that no
operation takes place on a cycle, the subsequest cycle may begin with
either a read or write. During write operations, the writing of individual
bytes may be blocked through the use of byte or nibble write control
signals.
The QDRII has echo clocks, which provide the user with a clock
Functional Block Diagram
DATA
REG
ADD
REG
CTRL
LOGIC
CLK
GEN
(Note1)
D
(Note2)
SA
R
W
(Note3)
BW
x
K
K
C
C
SELECT OUTPUT CONTROL
W
S
O
O
WRITE DRIVER
(Note2)
CQ
Q
(Note1)
18M
MEMORY
ARRAY
CQ
Notes
1) Represents 8 data signal lines for x8, 9 signal lines for x9, 18 signal lines for x18, and 36 signal lines for x36
2) Represents 19 address signal lines for x8 and x9, 18 address signal lines for x18, and 17 address signal lines for x36.
3) Represents 1 signal line for x9, 2 signal lines for x18, and four signal lines for x36. On x8 parts, the
BW
is a “nibble write”
and there are 2 signal lines.
O
6111 drw16
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| IDT71P74604S167BQ | 功能描述:IC SRAM 18MBIT 167MHZ 165FBGA RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:378 系列:- 格式 - 存儲器:閃存 存儲器類型:FLASH 存儲容量:8M（1M x 8，512K x 16） 速度:110ns 接口:并聯 電源電壓:2.7 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-CBGA 供應商設備封裝:48-CBGA（7x7） 包裝:托盤 |
| IDT71P74604S167BQ8 | 功能描述:IC SRAM 18MBIT 167MHZ 165FBGA RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:378 系列:- 格式 - 存儲器:閃存 存儲器類型:FLASH 存儲容量:8M（1M x 8，512K x 16） 速度:110ns 接口:并聯 電源電壓:2.7 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-CBGA 供應商設備封裝:48-CBGA（7x7） 包裝:托盤 |
| IDT71P74604S167BQG | 功能描述:IC SRAM 18MBIT 167MHZ 165FBGA RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:378 系列:- 格式 - 存儲器:閃存 存儲器類型:FLASH 存儲容量:8M（1M x 8，512K x 16） 速度:110ns 接口:并聯 電源電壓:2.7 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-CBGA 供應商設備封裝:48-CBGA（7x7） 包裝:托盤 |
| IDT71P74604S167BQG8 | 功能描述:IC SRAM 18MBIT 167MHZ 165FBGA RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:378 系列:- 格式 - 存儲器:閃存 存儲器類型:FLASH 存儲容量:8M（1M x 8，512K x 16） 速度:110ns 接口:并聯 電源電壓:2.7 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-CBGA 供應商設備封裝:48-CBGA（7x7） 包裝:托盤 |
| IDT71P74604S200BQ | 功能描述:IC SRAM 18MBIT 200MHZ 165FBGA RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:378 系列:- 格式 - 存儲器:閃存 存儲器類型:FLASH 存儲容量:8M（1M x 8，512K x 16） 速度:110ns 接口:并聯 電源電壓:2.7 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-CBGA 供應商設備封裝:48-CBGA（7x7） 包裝:托盤 |
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