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參數資料
| 型號： | IDT71V256SA20YGI8 |
| 廠商： | INTEGRATED DEVICE TECHNOLOGY INC |
| 元件分類： | DRAM |
| 英文描述： | Lower Power 3.3V CMOS Fast SRAM 256K (32K x 8-Bit) |
| 中文描述： | 32K X 8 CACHE SRAM, 20 ns, PDSO28 |
| 封裝： | 0.300 INCH, ROHS COMPLIANT, SOJ-28 |
| 文件頁數： | 1/8頁 |
| 文件大?。?/td> | 482K |
| 代理商： | IDT71V256SA20YGI8 |
JANUARY 2004
DSC-3101/08
1
2004 Integrated Device Technology, Inc.
Features
◆
Ideal for high-performance processor secondary cache
◆
Commercial (0°C to +70°C) and Industrial (–40°C to +85°C)
temperature range options
◆
Fast access times:
– Commercial and Industrial: 10/12/15/20ns
◆
Low standby current (maximum):
– 2mA full standby
◆
Small packages for space-efficient layouts:
– 28-pin 300 ml SOJ
– 28-pin TSOP Type I
◆
Produced with advanced high-performance CMOS
technology
◆
Inputs and outputs are LVTTL-compatible
◆
Single 3.3V(±0.3V) power supply
Description
The IDT71V256SA is a 262,144-bit high-speed static RAMorganized
as 32K x 8. It is fabricated using IDT’s high-performance, high-reliability
CMOS technology.
The IDT71V256SA has outstanding low power characteristics while
at the same time maintaining very high performance. Address access
times of as fast as 10ns are ideal for 3.3V secondary cache in 3.3V
desktop designs.
When power management logic puts the IDT71V256SA in standby
mode, its very low power characteristics contribute to extended battery life.
By taking
CS
HIGH, the SRAMwill automatically go to a low power standby
mode and will remain in standby as long as
CS
remains HIGH. Further-
more, under full standby mode (
CS
at CMOS level, f=0), power consump-
tion is guaranteed to always be less than 6.6mW and typically will be much
smaller.
The IDT71V256SA is packaged in a 28-pin 300 ml SOJ and a 28-pin
300 ml TSOP Type I.
Functional Block Diagram
A
0
ADDRESS
DECODER
262,144 BIT
MEMORY ARRAY
I/O CONTROL
3101 drw 01
INPUT
DATA
CIRCUIT
WE
CS
OE
V
CC
GND
A
14
I/O
0
I/O
7
CONTROL
CIRCUIT
,
Lower Power
3.3V CMOS Fast SRAM
256K (32K x 8-Bit)
IDT71V256SA
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| IDT71V256SA10PZG8 | Lower Power 3.3V CMOS Fast SRAM 256K (32K x 8-Bit) |
| IDT71V256SA10PZGI8 | Lower Power 3.3V CMOS Fast SRAM 256K (32K x 8-Bit) |
| IDT71V256SA10YG8 | Lower Power 3.3V CMOS Fast SRAM 256K (32K x 8-Bit) |
| IDT71V256SA10YGI8 | Lower Power 3.3V CMOS Fast SRAM 256K (32K x 8-Bit) |
| IDT71V256SA12PZG8 | Lower Power 3.3V CMOS Fast SRAM 256K (32K x 8-Bit) |
相關代理商/技術參數 |
參數描述 |
|---|---|
| IDT71V256SA20YI | 功能描述:IC SRAM 256KBIT 20NS 28SOJ RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 產品變化通告:Product Discontinuation 05/Nov/2008 標準包裝:84 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 同步 ZBT 存儲容量:4.5M（128K x 36） 速度:75ns 接口:并聯 電源電壓:3.135 V ~ 3.465 V 工作溫度:-40°C ~ 85°C 封裝/外殼:119-BGA 供應商設備封裝:119-PBGA（14x22） 包裝:托盤 其它名稱:71V3557SA75BGI |
| IDT71V256SA20YI8 | 功能描述:IC SRAM 256KBIT 20NS 28SOJ RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 產品變化通告:Product Discontinuation 05/Nov/2008 標準包裝:84 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 同步 ZBT 存儲容量:4.5M（128K x 36） 速度:75ns 接口:并聯 電源電壓:3.135 V ~ 3.465 V 工作溫度:-40°C ~ 85°C 封裝/外殼:119-BGA 供應商設備封裝:119-PBGA（14x22） 包裝:托盤 其它名稱:71V3557SA75BGI |
| IDT71V256SL15Y | 制造商:Integrated Device Technology Inc 功能描述: |
| IDT71V25761S166BG | 功能描述:IC SRAM 4MBIT 166MHZ 119BGA RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:2,000 系列:MoBL® 格式 - 存儲器:RAM 存儲器類型:SRAM - 異步 存儲容量:16M（2M x 8，1M x 16） 速度:45ns 接口:并聯 電源電壓:2.2 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-VFBGA 供應商設備封裝:48-VFBGA（6x8） 包裝:帶卷 (TR) |
| IDT71V25761S166BG8 | 功能描述:IC SRAM 4MBIT 166MHZ 119BGA RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:2,000 系列:MoBL® 格式 - 存儲器:RAM 存儲器類型:SRAM - 異步 存儲容量:16M（2M x 8，1M x 16） 速度:45ns 接口:并聯 電源電壓:2.2 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-VFBGA 供應商設備封裝:48-VFBGA（6x8） 包裝:帶卷 (TR) |
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