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參數資料
| 型號： | IFN422 |
| 英文描述： | TRANSISTOR|JFET|N-CHANNEL| DUAL|60UA I(DSS)|TO-78 |
| 中文描述： | 晶體管|場效應| N溝道|雙| 60UA我（直）|到78 |
| 文件頁數： | 1/1頁 |
| 文件大小： | 66K |
| 代理商： | IFN422 |
01/99
B-41
IFN421, IFN422, IFN423
Dual N-Channel Silicon Junction Field-Effect Transistor
Absolute maximum ratings at T
A
= 25C
Device Dissipation (Derate 3.2 mW/°C to 50°C)
Total Device Dissipation (Derate 6 mW/°C to 150°C)
Storage Temperature Range
400 mW
750 mW
– 65°C to 200°C
TOD78 Package
See Section G for Outline Dimensions
Pin Configuration
1 Source 1, 2 Drain 1, 3 Gate 1, 4 Case,
5 Source 2, 6 Drain 2, 7 Gate 2,
8 Omitted
At 25°C free air temperature:
IFN421, IFN422, IFN423
Process NJ01
Static Electrical Characteristics
Min
Typ
Max
Unit
Test Conditions
Gate Source Breakdown Voltage
Gate to Gate Breakdown Voltage
V
(BR)GSS
BV
G1G2
– 40
±40
– 60
V
V
pA
nA
pA
pA
V
V
μA
I
G
= – 1 μA, V
DS
= V
I
G
= – 1 μA, I
D
= A, I
S
= A
V
GS
= – 20V, V
DS
= V
V
GS
= – 20V, V
DS
= V
V
DS
= 10V, I
D
= 30 μA
V
DS
= 10V, I
D
= 30 μA
V
DS
= 10V, I
D
= 1 nA
V
DS
= 10V, I
D
= 30 μA
V
DS
= 10V, V
GS
= V
Gate Reverse Current
I
GSS
– 1
– 1
– 0.25
– 250
– 2
– 1.8
1000
T
A
= +125°C
Gate Operating Current
I
G
T
A
= +125°C
Gate Source Cutoff Voltage
Gate Source Voltage
Drain Saturation Current (Pulsed)
V
GS(OFF)
V
GS
I
DSS
– 0.4
60
Dynamic Electrical Characteristics
Common Source Forward Transconductance
g
fs
Common Source Output Conductance
Common Source Input Capacitance
Common Source Reverse Transfer Capacitance
C
rss
Equivalent Circuit Input Noise Voltage
100
1500
3
3
1.5
70
μS
μS
pF
pF
V
DS
= 10V, V
GS
= V
V
DS
= 10V, I
D
= 30 μA
V
DS
= 10V, V
GS
= V
V
DS
= 10V, V
GS
= V
V
DS
= 10V, I
D
= 30 μA
V
DS
= 10V, I
D
= 30 μA
R
G
= 10 M
f = 1 kHz
f = 1 kHz
f = 1 MHz
f = 1 MHz
f = 10 Hz
g
os
C
iss
ˉ
N
20
nV/
√
Hz
Noise Figure
NF
1
dB
f = 10 Hz
Max - IFN421 IFN422 IFN423
Differential Gate Source Voltage
|V
GS1
– V
GS2
|
10
15
25
mV
V
DG
= 10V, I
D
= 30 μA
Differential Gate Source Voltage
With Temperature
|V
GS1
– V
GS2
|
T
T
A
= – 55°C
T
B
= 25°C
T
C
= 125°C
10
25
40
μV/°C
V
DG
= 10V, I
D
= 30 μA
Min - IFN421 IFN422 IFN423
Common Mode Rejection Ratio
CMRR
90
80
80
dB
V
DG
= 10V to 20V, I
D
= 30 μA
￥ Very High Input Impedance
Differential Amplifiers
￥ Electrometers
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287
FAX
(972) 276-3375
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相關代理商/技術參數 |
參數描述 |
|---|---|
| IFN423 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | JFET | N-CHANNEL | DUAL | 60UA I(DSS) | TO-78 |
| IFN424 | 制造商:INTERFET 制造商全稱:INTERFET 功能描述:Dual N-Channel Silicon Junction Field-Effect Transistor |
| IFN425 | 制造商:INTERFET 制造商全稱:INTERFET 功能描述:Dual N-Channel Silicon Junction Field-Effect Transistor |
| IFN426 | 制造商:INTERFET 制造商全稱:INTERFET 功能描述:Dual N-Channel Silicon Junction Field-Effect Transistor |
| IFN6449 | 制造商:INTERFET 制造商全稱:INTERFET 功能描述:N-Channel Silicon Junction Field-Effect Transistor |
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