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參數資料
| 型號： | IFN860 |
| 英文描述： | TRANSISTOR | JFET | N-CHANNEL | DUAL | 10MA I(DSS) | TO-78 |
| 中文描述： | 晶體管|場效應| N溝道|雙| 10mA的我（直）|到78 |
| 文件頁數： | 1/1頁 |
| 文件大小： | 63K |
| 代理商： | IFN860 |
01/99
B-43
IFN860
Dual N-Channel Silicon Junction Field-Effect Transistor
Absolute maximum ratings at T
A
= 25C
Reverse Gate Source & Reverse Gate Drain Voltage
Continuous Forward Gate Current
Continuous Device Power Dissipation
Power Derating
Storage Temperature Range
– 20 V
50 mA
400 mW
2.3 mW/°C
– 65°C to 200°C
TOD71 Package
Dimensions in Inches (mm)
Pin Configuration
1 Source, 2 Drain, 3 Gate, 5 Source,
6 Drain, 7 Gate
At 25°C free air temperature:
IFN860
Process NJ450L
Static Electrical Characteristics
Min
Typ
Max
Unit
Test Conditions
Gate Source Breakdown Voltage
Gate Reverse Leakage Voltage
Gate Source Cutoff Voltage
Drain Saturation Current (Pulsed)
Differential Gate Source Voltage
V
(BR)GSS
I
GSS
V
GS(OFF)
I
DSS
|V
GS1
– V
GS2
|
– 20
V
nA
V
mA
mV
I
G
= – 1 μA, V
DS
= V
V
GS
= – 10V, V
DS
= V
V
DS
= 10V, I
D
= 100 μA
V
DS
= 10V, V
GS
= V
V
DS
= 10V, I
D
= 100 μA
3
– 0.3
10
– 3
25
Dynamic Electrical Characteristics
Transconductance
Common Source Input Capacitance
g
m
C
iss
25
40
30
mS
pF
V
DS
= 10V, I
D
= – 10 mA
V
DS
= 10V, I
D
= – 10 mA
f = 1 kHz
f = 1 MHz
35
Common Source Reverse Transfer
Capacitance
C
rss
17
20
pF
V
DS
= 10V, I
D
= – 10 mA
f = 1 MHz
Equivalent Short Circuit
Input Noise Voltage
ˉ
N
2
nV/
√
Hz
V
DG
= 3V, I
D
= 10 mA
f = 1 kHz
￥ Low-Noise Audio Amplifier
￥ Equivalent to Crystalonics
CD860
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287
FAX
(972) 276-3375
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