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參數資料
| 型號： | IGB15N60T |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | Low Loss IGBT in Trench and Fieldstop technology |
| 中文描述： | 在戴低損失和場終止IGBT技術 |
| 文件頁數： | 1/12頁 |
| 文件大小： | 364K |
| 代理商： | IGB15N60T |
Low Loss IGBT in Trench and Fieldstop
technology
Very low
V
CE(sat)
1.5 V (typ.)
Maximum Junction Temperature 175 °C
Short circuit withstand time – 5
μ
s
Designed for :
- Frequency Converters
- Uninterrupted Power Supply
Trench and Fieldstop technology for 600 V applications offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
- very high switching speed
- low
V
CE(sat)
Positive temperature coefficient in
V
CE(sat)
Low EMI
Low Gate Charge
Complete product spectrum and PSpice Models :
http://www.infineon.com/igbt/
Type
V
CE
I
C
V
CE(sat
),Tj=25°C
TrenchStop Series
IGB15N60T
q
Power Semiconductors
1
Rev. 2.1 Dec-04
T
j,max
Marking Code
Package
Ordering Code
IGB15N60T
600V
15A
1.5V
175
°
C
G15T60
TO-263
Q67040S4720
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-emitter voltage
DC collector current, limited by
T
jmax
T
C
= 25
°
C
T
C
= 100
°
C
Pulsed collector current,
t
p
limited by
T
jmax
Turn off safe operating area (
V
CE
≤
600V,
T
j
≤
175
°
C)
Gate-emitter voltage
Short circuit withstand time
1)
V
GE
= 15V,
V
CC
≤
400V,
T
j
≤
150
°
C
Power dissipation
T
C
= 25
°
C
Operating junction temperature
Storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
V
CE
I
C
600
30
15
V
A
I
Cpuls
-
45
45
V
GE
t
SC
±
20
5
V
μ
s
P
tot
T
j
T
stg
-
130
W
-40...+175
-55...+175
260
°
C
1)
Allowed number of short circuits: <1000; time between short circuits: >1s.
G
C
E
P-TO-263-3-2 (D2-PAK)
(TO-263AB)
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相關代理商/技術參數 |
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| IGB30N60H3 | 功能描述:IGBT 晶體管 600v Hi-Speed SW IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
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