- 您現在的位置：買賣IC網 > PDF目錄383103 > IHW30N90T (INFINEON TECHNOLOGIES AG) Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology with anti-parallel diode PDF資料下載
參數資料
| 型號： | IHW30N90T |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology with anti-parallel diode |
| 中文描述： | 低損耗DuoPack：IGBT的在TrenchStop和場終止技術與反并聯二極管 |
| 文件頁數： | 1/12頁 |
| 文件大小： | 329K |
| 代理商： | IHW30N90T |
IHW30N90T
Soft Switching Series
q
Power Semiconductors
1
Rev. 2.1 Apr 06
Low Loss DuoPack : IGBT in TrenchStop and Fieldstop
technology
with anti-parallel diode
Features:
1.1V Forward voltage of antiparallel diode
TrenchStop and Fieldstop technology for 900 V applications offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
- easy parallel switching capability due to positive
temperature coefficient in
V
CE(sat)
Low EMI
Qualified according to JEDEC
1
for target applications
Application specific optimisation of inverse diode
Pb-free lead plating; RoHS compliant
Applications:
Microwave Oven
Soft Switching Applications for ZCS
Type
V
CE
I
C
V
CE(sat
),Tj=25°C
T
j,max
Marking
Package
IHW30N90T
900V
30A
1.5V
175
°
C
H30T90
PG-TO-247-3-21
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-emitter voltage
DC collector current
T
C
= 25
°
C
T
C
= 100
°
C
Pulsed collector current,
t
p
limited by
T
jmax
Turn off safe operating area
V
CE
≤
1200V,
T
j
≤
150
°
C
Diode forward current
T
C
= 25
°
C
T
C
= 100
°
C
Diode pulsed current,
t
p
limited by
T
jmax
Gate-emitter voltage
Transient Gate-emitter voltage (
t
p
< 5 ms)
V
CE
I
C
900
60
30
V
A
I
Cpuls
-
900
90
I
F
23
13
I
Fpuls
V
GE
36
±
20
±
25
428
V
Power dissipation,
T
C
= 25
°
C
Operating junction temperature
P
tot
T
j
T
stg
-
W
-40...+175
°
C
°
C
Storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
-55...+175
260
1
J-STD-020 and JESD-022
G
C
E
PG-TO-247-3-21
相關PDF資料 |
PDF描述 |
|---|---|
| IKA06N60T | Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode |
| IKB06N60T | Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode |
| IKB20N60T | IGBT in Trench and Fieldstop technology with soft,fast recovery anti-parallel EmCon HE diode |
| IKP20N60T | IGBT in Trench and Fieldstop technology with soft,fast recovery anti-parallel EmCon HE diode |
| IKW20N60T | IGBT in Trench and Fieldstop technology with soft,fast recovery anti-parallel EmCon HE diode |
相關代理商/技術參數 |
參數描述 |
|---|---|
| IHW30N90T_08 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Soft Switching Series |
| IHW30N90TFKSA1 | 制造商:Infineon Technologies AG 功能描述:Trans IGBT Chip N-CH 900V 30A 3-Pin(3+Tab) TO-247 制造商:Infineon Technologies AG 功能描述:IGBT PRODUCTS - Rail/Tube 制造商:Infineon Technologies AG 功能描述:IGBT 900V 60A 428W TO247-3 |
| IHW40N120R3FKSA1 | 制造商:Infineon Technologies AG 功能描述:IGBT PRODUCTS - Rail/Tube 制造商:Infineon Technologies AG 功能描述:IGBT 1200V 80A 429W TO247-3 |
| IHW40N135R3FKSA1 | 功能描述:IGBT 晶體管 IGBT PRODUCTS RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IHW40N60R | 功能描述:IGBT 晶體管 IH SeriesRev Conduct IGBT Monolithic Body RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
發布緊急采購，3分鐘左右您將得到回復。