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參數(shù)資料
| 型號(hào)： | IKP01N120H2 |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode |
| 中文描述： | 高速2技術(shù)與軟，恢復(fù)快反平行何快恢復(fù)二極管 |
| 文件頁(yè)數(shù)： | 1/14頁(yè) |
| 文件大小： | 386K |
| 代理商： | IKP01N120H2 |
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IKP01N120H2
Power Semiconductors
1
Rev. 2.3 May 06
HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode
Designed for:
- SMPS
- Lamp Ballast
- ZVS-Converter
- optimised for soft-switching / resonant topologies
2
nd
generation HighSpeed-Technology
for 1200V applications offers:
- loss reduction in resonant circuits
- temperature stable behavior
- parallel switching capability
- tight parameter distribution
-
E
off
optimized for
I
C
=1A
Pb-free lead plating; RoHS compliant
Qualified according to JEDEC
2
for target applications
Complete product spectrum and PSpice Models :
http://www.infineon.com/igbt/
Type
V
CE
I
C
E
off
T
j
Marking
Package
IKP01N120H2
1200V
1A
0.09mJ
150
°
C
K01H1202 PG-TO-220-3-1
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-emitter voltage
Triangular collector current
T
C
= 25
°
C,
f
= 140kHz
T
C
= 100
°
C,
f
= 140kHz
Pulsed collector current,
t
p
limited by
T
jmax
Turn off safe operating area
V
CE
≤
1200V,
T
j
≤
150
°
C
Diode forward current
T
C
= 25
°
C
T
C
= 100
°
C
Gate-emitter voltage
V
CE
I
C
1200
3.2
1.3
V
A
I
Cpuls
-
3.5
3.5
I
F
3.2
1.3
V
GE
P
tot
±
20
28
V
Power dissipation
T
C
= 25
°
C
Operating junction and storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
W
T
j
,
T
stg
-
-40...+150
260
°
C
2
J-STD-020 and JESD-022
G
C
E
PG-TO-220-3-1
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IKP01N120H2XKSA1 | 制造商:Infineon Technologies AG 功能描述:IGBT 1200V 3.2A 28W TO220-3 |
| IKP03N120H2 | 功能描述:IGBT 晶體管 HIGH SPEED 2 TECH 1200V 3A RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IKP03N120H2_08 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode |
| IKP03N120H2XKSA1 | 制造商:Infineon Technologies AG 功能描述:Trans IGBT Chip N-CH 1.2KV 9.6A 3-Pin(3+Tab) TO-220AB 制造商:Infineon Technologies AG 功能描述:IGBT PRODUCTS - Rail/Tube 制造商:Infineon Technologies AG 功能描述:IGBT 1200V 9.6A 62.5W TO220-3 |
| IKP04N60T | 功能描述:IGBT 晶體管 LOW LOSS DuoPack 600V 4A RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
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