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參數資料
| 型號： | IKP03N120H2 |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode |
| 中文描述： | 高速2技術與軟，恢復快反平行何快恢復二極管 |
| 文件頁數： | 1/15頁 |
| 文件大小： | 431K |
| 代理商： | IKP03N120H2 |
IKP03N120H2,
IKW03N120H2
IKB03N120H2
Power Semiconductors
1
Rev. 2, Mar-04
HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode
Designed for:
- SMPS
- Lamp Ballast
- ZVS-Converter
2
nd
generation HighSpeed-Technology
for 1200V applications offers:
- loss reduction in resonant circuits
- temperature stable behavior
- parallel switching capability
- tight parameter distribution
-
E
off
optimized for
I
C
=3A
Complete product spectrum and PSpice Models :
http://www.infineon.com/igbt/
Type
V
CE
I
C
E
off
T
j
Package
Ordering Code
IKW03N120H2
1200V
3A
0.15mJ
150
°
C
P-TO-247
Q67040-S4595
IKP03N120H2
1200V
3A
0.15mJ
150°C
P-TO-220-3-1
P-TO-263 (D
2
PAK)
Q67040-S4594
IKB03N120H2
1200V
3A
0.15mJ
150°C
Q67040-S4597
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-emitter voltage
Triangular collector current
T
C
= 25
°
C,
f
= 140kHz
T
C
= 100
°
C,
f
= 140kHz
Pulsed collector current,
t
p
limited by
T
jmax
Turn off safe operating area
V
CE
≤
1200V,
T
j
≤
150
°
C
Diode forward current
T
C
= 25
°
C
T
C
= 100
°
C
Gate-emitter voltage
V
CE
I
C
1200
9.6
3.9
V
A
I
Cpuls
-
9.9
9.9
I
F
9.6
3.9
V
GE
P
tot
±
20
62.5
V
Power dissipation
T
C
= 25
°
C
Operating junction and storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
W
T
j
,
T
stg
-
-40...+150
260
225 (for SMD)
°
C
P-TO-220-3-1
(TO-220AB)
P-TO-263-3-2 (D2-PAK)
(TO-263AB)
P-TO-247-3-1
(TO-247AC)
G
C
E
相關PDF資料 |
PDF描述 |
|---|---|
| IKW03N120H2 | HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode |
| IKB03N120H2 | Tantalum Molded Capacitor; Capacitance: .47uF; Voltage: 35V; Case Size: 3.2x1.6 mm; Packaging: Tape & Reel |
| IKW25T120 | TRENCHSTOP SERIES |
| IKW40T120 | LOW LOSS DUOPACK : IGBT IN TRENCH AND FIELDSTOP TECHNOLOGY WITH SOFT, FAST RECOVERY ANTI-PARAALEL EMCON HE DIODE |
| IKW50N60T | Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode |
相關代理商/技術參數 |
參數描述 |
|---|---|
| IKP03N120H2_08 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode |
| IKP03N120H2XKSA1 | 制造商:Infineon Technologies AG 功能描述:Trans IGBT Chip N-CH 1.2KV 9.6A 3-Pin(3+Tab) TO-220AB 制造商:Infineon Technologies AG 功能描述:IGBT PRODUCTS - Rail/Tube 制造商:Infineon Technologies AG 功能描述:IGBT 1200V 9.6A 62.5W TO220-3 |
| IKP04N60T | 功能描述:IGBT 晶體管 LOW LOSS DuoPack 600V 4A RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IKP04N60T_09 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology |
| IKP04N60TXKSA1 | 制造商:Infineon Technologies AG 功能描述:Trans IGBT Chip N-CH 600V 8A 3-Pin(3+Tab) TO-220 制造商:Infineon Technologies AG 功能描述:IGBT PRODUCTS - Rail/Tube 制造商:Infineon Technologies AG 功能描述:IGBT 600V 8A 42W TO220-3 |
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