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參數資料
| 型號： | IL203-1 |
| 英文描述： | NPN-OUTPUT DC-INPUT OPTOCOUPLER |
| 中文描述： | npn型輸出DC -輸入光耦合器 |
| 文件頁數： | 1/3頁 |
| 文件大小： | 390K |
| 代理商： | IL203-1 |
www.infineon.com/opto 1-888-Infineon (1-888-463-4636)
2001 Infineon Technologies Corp. Optoelectronics Division San Jose, CA
2–104
March 1, 2000-00
FEATURES
High Current Transfer Ratio, 75% to 450%
Minimum Current Transfer Ratio, 10%
Guaranteed at
I
F
=1.0mA
High Collector-Emitter Voltage, BV
Long Term Stability
Industry Standard DIP Package
Underwriters Lab File #E52744
VDE 0884 Available with Option 1
CEO
=70V
DESCRIPTION
The IL201/202/203 are optically coupled pairs
employing a Gallium Arsenide infrared LED and a
Silicon NPN phototransistor. Signal information,
including a DC level, can be transmitted by the
device while maintaining a high degree of electri-
cal isolation between input and output. The
IL201/202/203 can be used to replace relays and
transformers in many digital interface applica-
tions, as well as analog applications such as CRT
modulation.
Maximum Ratings
Emitter
Peak Reverse Voltage .................................. 6.0 V
Continuous Forward Current ...................... 60 mA
Power Dissipation at 25
°
C....................... 100 mW
Derate Linearly from 25
°
C................. 1.33 mW/
Detector
Collector-Emitter Breakdown Voltage,
BV
CEO
........................................................ 70 V
Emitter-Collector Breakdown Voltage,
BV
ECO
....................................................... 7.0 V
Collector-Base Breakdown Voltage,
BV
CBO
....................................................... 70 V
Power Dissipation.................................... 200 mW
Derate Linearly from 25
°
C................... 2.6 mW/
Package
Isolation Test Voltage (t=1.0 sec.) ...... 5300 V
Total Package Dissipation at 25
(LED + Detector).................................. 250 mW
Derate Linearly from 25
°
C................... 3.3 mW/
Creepage ...............................................
Clearance...............................................
Storage Temperature ................ –55
Operating Temperature ............ –55
Lead Soldering Time at 260
°
C
°
C
RMS
°
C A
°
C
≥
≥
7.0 min
7.0 min
°
°
C to +150
C to +100
°
°
C
C
°
C..................10 sec.
V
D E
Characteristics
Parameter
Emitter
Forward Voltage
Forward Voltage
Breakdown Voltage
Reverse Current
0
°
C to 70
°
C unless otherwise specified
Symbol
Min.
Typ.
Max.
Unit
Condition
V
F
—
—
6.0
—
1.2
1.0
20
0.1
1.5
1.2
—
10
V
I
I
I
V
T
F
=20 mA
=1.0 mA
=10
=6.0 V
A
=25°C
F
R
μ
A
I
R
μ
A
R
Detector
Transistor Gain
HFE
100
200
—
—
V
I
I
CE
C
=100
=100
=5.0 V
μ
μ
A
A
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Collector
Breakdown Voltage
Collector-Base
Leakage Current
Collector-Emitter
Package
Base Current Transfer
Ratio
BV
CEO
70
—
—
V
C
BV
ECO
7.0
10
—
I
E
=100
μ
A
BV
CBO
70
90
—
I
C
=10
μ
A
I
CEO
—
5.0
50
nA
V
T
CE
A
=25°C
=10 V,
CTRCB
0.15
—
—
%
I
V
I
I
I
V
F
=10 mA
CB
=10 V
=10 mA
C
=2.0 mA
=10 mA,
CE
=10 V
V
CE
sat
—
—
0.4
V
F
DC Current Transfer Ratio
IL201
IL202
IL203
DC Current Transfer Ratio
IL201
IL202
IL203
CTR
75
125
225
100
200
300
—
150
250
450
—
%
F
CTR
10
30
50
%
I
V
F
=1.0 mA,
CE
=10 V
.010 (.25)
typ.
.114 (2.90)
.130 (3.0)
.130 (3.30)
.150 (3.81)
.031 (0.80) min.
.300 (7.62)
typ.
.031 (0.80)
.035 (0.90)
.100 (2.54) typ.
.039
(1.00)
Min.
.018 (0.45)
.022 (0.55)
.048 (0.45)
.022 (0.55)
.248 (6.30)
.256 (6.50)
.335 (8.50)
.343 (8.70)
pin one ID
6
5
4
1
2
3
18
°
3
°
–
9
°
.300
–
.347
(7.62
–
8.81)
4
°
typ.
Dimensions in inches (mm)
1
2
3
6
5
4
Base
Collector
Emitter
Anode
Cathode
NC
IL201/IL202/IL203
Phototransistor
Optocoupler
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| IL203B643 | 制造商:SIEMENS 功能描述:* |
| IL203-X007 | 功能描述:晶體管輸出光電耦合器 Phototransistor Out Single CTR 225-450% RoHS:否 制造商:Vishay Semiconductors 輸入類型:DC 最大集電極/發射極電壓:70 V 最大集電極/發射極飽和電壓:0.4 V 絕緣電壓:5300 Vrms 電流傳遞比:100 % to 200 % 最大正向二極管電壓:1.65 V 最大輸入二極管電流:60 mA 最大集電極電流:100 mA 最大功率耗散:100 mW 最大工作溫度:+ 110 C 最小工作溫度:- 55 C 封裝 / 箱體:DIP-4 封裝:Bulk |
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