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參數(shù)資料
| 型號： | IL216A |
| 廠商： | SIEMENS A G |
| 元件分類： | 光電耦合器 |
| 英文描述： | PHOTOTRANSISTOR SMALL OUTLINE SURFACE MOUNT OPTOCOUPLER |
| 中文描述： | 1 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER |
| 封裝： | SOIC-8 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大小： | 70K |
| 代理商： | IL216A |
5–1
FEATURES
High Current Transfer Ratio, I
F
IL215A—20% Minimum
IL216A—50% Minimum
IL217A—100% Minimum
Isolation Voltage, 2500 VAC
RMS
Electrical Specifications Similar to
Standard 6 Pin Coupler
Industry Standard SOIC-8 Surface
Mountable Package
Standard Lead Spacing, .05"
Available in Tape and Reel Option
(Conforms to EIA Standard RS481A)
Compatible with Dual Wave, Vapor Phase
and IR Reflow Soldering
Underwriters Lab File #E52744
(Code Letter P)
DESCRIPTION
=1 mA
The IL215A/216A/217A are optically coupled pairs
with a Gallium Arsenide infrared LED and a silicon
NPN phototransistor. Signal information, including
a DC level, can be transmitted by the device while
maintaining a high degree of electrical isolation
between input and output. The IL215A//216A/217A
comes in a standard SOIC-8 small outline package
for surface mounting which makes it ideally suited
for high density applications with limited space. In
addition to eliminating through-holes requirements,
this package conforms to standards for surface
mounted devices.
The high CTR at low input current is designed for
low power consumption requirements such as
CMOS microprocessor interfaces.
Maximum Ratings
Emitter
Peak Reverse Voltage .....................................6.0 V
Continuous Forward Current........................ 60 mA
Power Dissipation at 25
°
C............................90 mW
Derate Linearly from 25
°
C ......................1.2 mW/
Detector
Collector-Emitter Breakdown Voltage...............30 V
Emitter-Collector Breakdown Voltage.................7 V
Collector-Base Breakdown Voltage..................70 V
Power Dissipation ......................................150 mW
Derate Linearly from 25
°
C ......................2.0 mW/
Package
Total Package Dissipation at 25
(LED + Detector).....................................280 mW
Derate Linearly from 25
°
C ......................3.3 mW/
Storage Temperature .................. –55
Operating Temperature .............. –55
Soldering Time at 260
°
C .............................10 sec.
°
C
°
C
°
C Ambient
°
C
°
C
°
C
°
C to +150
°
C to +100
Characteristics
(T
A
=25
°
C)
Symbol
Min.
Typ.
Max.
Unit
Condition
Emitter
Forward Voltage
V
F
1.0
1.5
V
I
F
=1 mA
Reverse Current
I
R
0.1
100
μ
A
V
R
=6.0 V
Capacitance
C
O
25
pF
V
R
=0
Detector
Breakdown Voltage
Collector-Emitter
Emitter-Collector
B
VCEO
B
VECO
30
7
V
V
I
C
=10
I
E
=10
μ
A
μ
A
Dark Current,
Collector-Emitter
I
CEOdark
5
50
nA
V
CE
=10 V
I
F
Capacitance,
Collector-Emitter
C
CE
10
pF
V
CE
=0
Package
DC Current Transfer
Ratio
IL215A
IL216A
IL217A
CTR
DC
20
50
100
50
80
130
%
I
F
=10 mA,
V
CE
=5 V
Saturation Voltage,
Collector-Emitter
V
CEsat
0.5
I
F
=1 mA,
I
C
=0.1 mA
Isolation Test Voltage
V
IO
2500
VAC
RMS
Capacitance,
Input to Output
C
IO
0.5
pF
Resistance,
Input to Output
R
IO
100
G
Switching Time
t
on
,t
off
3.0
μ
s
I
C
=2 mA,
R
E
=100
V
CE
=10 V
,
Dimensions in inches (mm)
40
°
.240
(6.10)
.154
±
.005
(3.91
±
.13)
.050 (1.27)
typ.
.021 (.53)
.016 (.41)
.192
±
.005
(4.88
±
.13)
.004 (.10)
.008 (.20)
Lead
Coplanarity
±
.0015 (.04)
max.
.015
±
.002
(.38
±
.05)
.008 (.20)
7
°
.058
±
.005
(1.49
±
.13)
.125
±
.005
(3.18
±
.13)
Pin One ID
.120
±
.005
(3.05
±
.13)
CL
5
°
max.
R.010
(.25) max.
.020
±
.004
(.15
±
.10)
2 plcs.
1
2
3
4
Anode
Cathode
NC
NC
8
7
6
5
NC
Base
Collector
Emitter
IL215A/216A/217A
PHOTOTRANSISTOR
SMALL OUTLINE
SURFACE MOUNT OPTOCOUPLER
This document was created with FrameMaker 4.0.4
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IL217A | PHOTOTRANSISTOR SMALL OUTLINE SURFACE MOUNT OPTOCOUPLER |
| IL215 | SMALL OUTLINE OPTICALLY COUPLED ISOLATOR TRANSISTOR OUTPUT |
| IL221 | PHOTODARLINGTON SMALL OUTLINE SURFACE MOUNT OPTOCOUPLER |
| IL221A | PHOTODARLINGTON SMALL OUTLINE SURFACE MOUNT OPTOCOUPLER |
| IL221AT | PHOTODARLINGTON SMALL OUTLINE SURFACE MOUNT OPTOCOUPLER |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IL216AT | 功能描述:晶體管輸出光電耦合器 Phototransistor Out Single CTR >50% RoHS:否 制造商:Vishay Semiconductors 輸入類型:DC 最大集電極/發(fā)射極電壓:70 V 最大集電極/發(fā)射極飽和電壓:0.4 V 絕緣電壓:5300 Vrms 電流傳遞比:100 % to 200 % 最大正向二極管電壓:1.65 V 最大輸入二極管電流:60 mA 最大集電極電流:100 mA 最大功率耗散:100 mW 最大工作溫度:+ 110 C 最小工作溫度:- 55 C 封裝 / 箱體:DIP-4 封裝:Bulk |
| IL216AT | 制造商:Vishay Semiconductors 功能描述:Optocoupler |
| IL216ATG | 制造商:Infineon Technologies AG 功能描述: |
| IL216T | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Optoelectronic |
| IL217 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:SMALL OUTLINE OPTICALLY COUPLED ISOLATOR TRANSISTOR OUTPUT |
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