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參數資料
| 型號： | IL223AT |
| 廠商： | SIEMENS A G |
| 元件分類： | 光電耦合器 |
| 英文描述： | PHOTODARLINGTON SMALL OUTLINE SURFACE MOUNT OPTOCOUPLER |
| 中文描述： | 1 CHANNEL DARLINGTON OUTPUT OPTOCOUPLER |
| 文件頁數： | 1/3頁 |
| 文件大小： | 54K |
| 代理商： | IL223AT |
Semiconductor Group 4–10
PHOTODARLINGTON
NEW
SMALL OUTLINE
SURFACE MOUNT OPTOCOUPLER
Package Dimensions in Inches (mm)
FEATURES
High Current Transfer Ratio, I
F
=1 mA,
IL221AT, 100% Minimum
IL222AT, 200% Minimum
IL223AT, 500% Minimum
Withstand Test Voltage, 2500 VAC
RMS
Electrical Specifications Similar to
Standard 6 Pin Coupler
Industry Standard SOIC-8 Surface
Mountable Package
Standard Lead Spacing, .05"
Available in Tape and Reel (suffix T)
(Conforms to EIA Standard RS481A)
Compatible with Dual Wave, Vapor Phase
and IR Reflow Soldering
Underwriters Lab File #E52744
(Code Letter P)
DESCRIPTION
The IL221AT/IL222AT/IL223AT is a high current
transfer ratio (CTR) optocoupler with a Gallium
Arsenide infrared LED emitter and a silicon NPN
photodarlington transistor detector.
This device has a CTR tested at an 1 mA LED
current. This low drive current permits easy interfac-
ing from CMOS to LSTTL or TTL.
This optocoupler is constructed in a standard SOIC-
8 foot print which makes it ideally suited for high
density applications. In addition to eliminating
through-holes requirements, this package conforms
to standards for surface mounted devices.
Maximum Ratings
Emitter
Peak Reverse Voltage............................................6.0 V
Continuous Forward Current ...............................60 mA
Power Dissipation at 25
°
C ..................................90 mW
Derate Linearly from 25
°
C ............................1.2 mW/
°
C
Detector
Collector-Emitter Breakdown Voltage..................... 30 V
Emitter-Collector Breakdown Voltage.......................5 V
Collector-Base Breakdown Voltage........................70 V
Power Dissipation .............................................150 mW
Derate Linearly from 25
°
C ........................... 2.0 mW/
°
C
Package
Total Package Dissipation at 25
°
C Ambient
(LED + Detector)...........................................240 mW
Derate Linearly from 25
°
C ........................... 3.3 mW/
°
C
Storage Temperature......................... –55
°
C to +150
°
C
Operating Temperature ..................... –55
°
C to +100
°
C
Soldering Time at 260
°
C.................................... 10 sec.
TOLERANCE:
±
.005 (unless otherwise noted)
Characteristics
(T
A
=25
°
C)
Symbol Min. Typ.
Max.
Unit
Condition
Emitter
Forward Voltage
Reverse Current
Capacitance
V
F
I
R
C
O
1.0
0.1
25
1.5
100
V
I
F
=1mA
V
R
=6.0 V
V
=0 V,
F=1 MHz
μ
A
pF
Detector
Breakdown Voltage
Collector-Emitter
Emitter-Collector
Collector-Base Voltage BV
CBO
Collector-Emitter
Capacitance
Package
DC Current Transfer
Ratio
IL221AT
IL222AT
IL223AT
Collector-Emitter
Saturation Voltage
Isolation Test
Voltage
Capacitance,
Input to Output
Resistance,
Input to Output
Specifications subject to change.
BV
CEO
BV
ECO
30
5
70
V
V
I
C
=100
μ
A
I
E
=100
μ
A
I
C
=10
μ
A
C
CE
3.4
pF
V
CE
=10 V
I
F
=1 mA,
V
CE
=5 V
CTR
DC
100
200
500
I
CE
=0.5 mA,
I
F
=1 mA
V
CE sat
1
V
V
IO
2500
VAC
RMS
t=1 sec.
C
IO
0.5
pF
R
IO
100
G
1
2
3
4
Anode
Cathode
NC
NC
8
7
6
5
NC
Base
Collector
Emitter
40
°
.240
(6.10)
.154
±
.005
(3.91
±
.13)
.050 (1.27)
typ.
.016 (.41)
.192
±
.005
(4.88
±
.13)
.004 (.10)
.008 (.20)
Lead
Coplanarity
±
.0015 (.04)
max.
.015
±
.002
(.38
±
.05)
.008 (.20)
7
°
.058
±
.005
(1.49
±
.13)
.125
±
.005
(3.18
±
.13)
Pin One ID
.120
±
.005
(3.05
±
.13)
CL
.040 (1.02)
5
°
max.
R.010
(.25) max.
.020
±
.004
(.15
±
.10)
2 plcs.
10.95
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