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參數資料
| 型號： | ILD03N60 |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | LightMOS Power Transistor |
| 中文描述： | LightMOS功率晶體管 |
| 文件頁數： | 1/15頁 |
| 文件大小： | 330K |
| 代理商： | ILD03N60 |
ILA03N60, ILP03N60
ILB03N60, ILD03N60
^
LightMOS Power Transistor
New high voltage technology designed for ZVS-switching in lamp
ballasts
IGBT with integrated reverse diode
4A current rating for reverse diode
Up to 10 times lower gate capacitance than MOSFET
Avalanche rated
150°C operating temperature
FullPak isolates 2.5 kV AC (1 min.)
Power Semiconductors
1
Rev. 1.2 Apr-04
G
Type
V
CE
I
C
V
CE(sat
),Tj=25°C
T
j,max
Package
Ordering Code
ILA03N60
600V
3.0A
2.9V
150°C
P-TO-220-3-31 Q67040-S4626
ILP03N60
600V
3.0A
2.9V
150°C
P-TO-220-3-1
Q67040-S4628
ILB03N60
600V
3.0A
2.9V
150°C
P-TO-263-3-2
Q67040-S4627
ILD03N60
600V
3.0A
2.9V
150
°
C
P-TO-252-3-1
Q67040-S4625
Maximum Ratings
Value
Parameter
Symbol
ILA03N60
Others
Unit
Collector-emitter voltage
V
CE
I
C
600
V
A
DC collector current
T
C
= 25
°
C
T
C
= 100
°
C
Pulsed collector current,
t
p
limited by
T
jmax
,
t
p
< 10 ms
Pulsed collector current,
t
p
limited by
T
jmax
Diode forward current
3
2.2
4.5
3
9
I
Cpuls
5.5
T
C
= 25
°
C
T
C
= 100
°
C
Diode pulsed current,
t
p
limited by
T
jmax
,
t
p
< 10 ms
Diode pulsed current,
t
p
limited by
T
jmax
Avalanche energy, single pulse
I
C
=0.4A,
V
CE
=50V
Gate-emitter voltage
I
F
4
2.2
4
2.5
9
I
Fpuls
5.5
0.32
E
AS
mJ
V
GE
d
v
/d
t
±
30
1
1
V
Reverse diode d
v
/d
t
I
C
≤
3A,
V
CE
≤
450V,
T
jmax
≤
150°C
Power dissipation (
T
C
= 25
°
C)
Operating junction and storage temperature
Soldering temperature
for 10 s (according to JEDEC J-STA-020A)
V/ns
P
tot
T
stg
T
s
16.5
27
W
-55...+150
D-Pak 255
Others 220
°
C
1
Reverse diode of transistor is commutated with same device according to figure C. With application
relevant values
I
C
≤
1.5A,
C
Snubber
= 1 nF and
R
G
≥
50
, d
v
/d
t
of the reverse diode is within its specification.
C
E
P-TO-252-3-1 (D-PAK)
(TO-252AA)
P-TO-263-3-2 (D
2
-PAK)
(TO-263AB)
P-TO-220-3-1
(TO-220AB)
P-TO-220-3-31
(TO-220 FullPak)
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