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參數資料
| 型號： | IMC020FLSP |
| 廠商： | INTEL CORP |
| 元件分類： | DRAM |
| 英文描述： | 20 MegaBaytes Series 2+ Flash Memory Card(20M字節閃速存儲器卡) |
| 中文描述： | 10M X 16 FLASH 12V PROM CARD, 250 ns, XMA68 |
| 文件頁數： | 1/41頁 |
| 文件大小： | 575K |
| 代理商： | IMC020FLSP |
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E
December 1997
Order Number: 290491-007
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Single Power Supply
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Automatically Reconfigures for 3.3 V
and 5 V Systems
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150 ns Maximum Access Time with 5 V
Power Supply
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250 ns Maximum Access Time with
3.3 V Power Supply
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High-Performance Random Writes
0.85 MB/S Sustained Throughput
1 KB Burst Write at 10 MB/S
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25 μA Typical Deep Power-Down
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Revolutionary Architecture
Pipelined Command Execution
Write during Erase
Series 2 Command Super-Set
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State-of-the-Art 0.6 μm ETOX IV Flash
Technology
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1 Million Erase Cycles per Block
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Up to 640 Independent Lockable Blocks
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PCMCIA 2.1/JEIDA 4.1-Compatible
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PCMCIA Type 1 Form Factor
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Series 2+ User’s Manual
Intel’s Series 2+ Flash Memory Card sets the new record for high-performance disk emulation and eXecute-
In-Place (XIP) applications in mobile PCs and dedicated equipment. Manufactured with Intel’s 28F016SA
16-Mbit (DD28F032SA 32-Mbit) FlashFile memory, this card takes advantage of a revolutionary
architecture that provides innovative capabilities, low-power operation and very high read/write performance.
The Series 2+ card provides today’s highest density, highest performance nonvolatile read/write solution for
solid-state storage applications. These applications are enhanced further with this product’s symmetrically-
blocked architecture, extended MTBF, low-power 3.3 V operation, built-in V
generator, and multiple block
locking methods. The Series 2+ card’s dual read and write voltages allow interchange between 3.3 V and
5.0 V systems.
SERIES 2+ FLASH MEMORY CARDS
4-, 8-, 20- AND 40 MEGABYTES
iMC004FLSP, iMC008FLSP, iMC020FLSP, iMC040FLSP
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