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參數(shù)資料
| 型號： | IMD8A |
| 廠商： | Rohm CO.,LTD. |
| 英文描述： | Digital Transistor Dual Digital Transistors for Inverter Drive |
| 中文描述： | 數(shù)字晶體管雙數(shù)字晶體管逆變器 |
| 文件頁數(shù)： | 1/1頁 |
| 文件大小： | 48K |
| 代理商： | IMD8A |
IMD8A
Transistors
Digital Transistor
(Dual Digital Transistors for Inverter Drive)
IMD8A
!
Features
1) Both the DTA144T chip and DTC144T chip in a SMT package.
!
Absolute maximum ratings
(Ta = 25
°
C)
Parameter
200mW per element must not be exceeded. PNP type negative symbols have been omitted.
Symbol
V
CBO
V
CEO
V
EBO
I
C
Pc
Tstg
Limits
50
50
5
100
300(TOTAL)
55~
+
150
Unit
V
V
V
mA
mW
°
C
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Storage temperature
!
Package, marking, and packaging specifications
Type
Package
Marking
Code
IMD8A
SMT6
D8
T108
3000
Basic
ordering unit
(pieces)
!
External dimensions
(Units : mm)
ROHM : SMT6
EIAJ : SC-74
Each lead has same dimensions
(
(
(
0.3to0.6
0
0
1
0
0
(
2.8
1.6
1
2
0
0
(
(
!
Circuit diagram
R
1
R
1
!
Electrical characteristics
(Ta = 25
°
C)
Parameter
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
R
1
Min.
50
50
50
100
32.9
Typ.
250
47
Max.
0.5
0.5
0.3
600
61.1
Unit
V
V
V
μ
A
μ
A
V
k
Conditions
I
C
=
50
μ
A
I
C
=
1mA
I
E
=
50
μ
A
V
CB
=
50V
V
EB
=
4V
I
C
=
5mA
, I
B
=
0.5mA
V
CE
=
5V
, I
C
=
1mA
PNP type negative symbols have been omitted.
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current
transfer ratio
Input resistance
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