- 您現在的位置：買賣IC網 > PDF目錄358001 > IMX8 (Rohm CO.,LTD.) GT 3C 3#16S PIN PLUG PDF資料下載
參數資料
| 型號： | IMX8 |
| 廠商： | Rohm CO.,LTD. |
| 英文描述： | GT 3C 3#16S PIN PLUG |
| 中文描述： | 通用（雙晶體管） |
| 文件頁數： | 1/2頁 |
| 文件大小： | 43K |
| 代理商： | IMX8 |
DS30304 Rev. A-2
1 of 2
IMX8
IMX8
DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Epitaxial Planar Die Construction
Complementary PNP Type Available
(IMT4)
Small Surface Mount Package
Characteristic
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
d
R
JA
T
j
, T
STG
IMX8
120
120
5.0
50
225
555
Unit
V
V
V
mA
mW
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage and Temperature Range
C/W
C
-55 to +150
Features
Maximum Ratings
@ T
A
= 25 C unless otherwise specified
A
M
J
L
F
D
B C
H
K
B
2
B
1
E
1
C
2
E
2
C
1
KX8
Mechanical Data
Case: SOT-26, Molded Plastic
Case material - UL Flammability Rating
Classification 94V-0
Terminals: Solderable per MIL-STD-202,
Method 208
Terminal Connections: See Diagram
Marking: KX8
Weight: 0.016 grams (approx.)
N
SOT-26
Min
Dim
A
B
C
D
F
H
J
K
L
M
All Dimensions in mm
Max
Typ
0.35
0.50
0.38
1.50
1.70
1.60
2.70
3.00
2.80
0.95
0.55
2.90
3.10
3.00
0.013 0.10
0.05
1.00
1.30
1.10
0.35
0.55
0.40
0.10
0.20
0.15
Electrical Characteristics
@ T
A
= 25 C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 2)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
120
120
5.0
V
V
V
A
A
I
C
= 50 A
I
C
= 1.0mA
I
E
= 50 A
V
CB
= 100V
V
EB
= 4.0V
0.5
0.5
ON CHARACTERISTICS (Note 2)
DC Current Gain
Collector-Emitter Saturation Voltage
h
FE
180
820
0.5
I
C
= 2.0mA, V
CE
= 6.0V
I
C
= 10mA, I
B
= 1.0mA
V
CE(SAT)
V
SMALL SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product
f
T
140
MHz
V
= 12V, I
E
= -2.0mA,
f = 100MHz
Notes: 1. Device mounted on FR-5 PCB 1.0 x 0.75 x 0.062 inch pad layout as shown on Diodes Inc. suggested pad layout AP02001, which
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 200mW per element must not be exceeded.
2. Short duration test pulse used to minimize self-heating effect.
3. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Device
IMX8-7
Packaging
SOT-26
Shipping
3000/Tape & Reel
Ordering Information
(Note 3)
相關PDF資料 |
PDF描述 |
|---|---|
| IPL1-105-01-S-S | 5 CONTACT(S), MALE, POWER CONNECTOR, SOLDER |
| IPL1-102-01-S-S | 2 CONTACT(S), MALE, POWER CONNECTOR, SOLDER |
| IPL1-110-01-S-S | 10 CONTACT(S), MALE, POWER CONNECTOR, SOLDER |
| IQBG-2000A+ | 1800 MHz - 2000 MHz RF/MICROWAVE I/Q MODULATOR, 9 dB CONVERSION LOSS-MAX |
| IR185BG08DPBF | SCR |
相關代理商/技術參數 |
參數描述 |
|---|---|
| IMX8_1 | 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR |
| IMX8_2 | 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR |
| IMX8-7 | 功能描述:兩極晶體管 - BJT DUAL NPN 225mW RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| IMX8-7-F | 功能描述:兩極晶體管 - BJT DUAL NPN 225mW SIGNAL DUAL NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| IMX8T108 | 功能描述:兩極晶體管 - BJT DUAL NPN 120V 50MA SOT-457 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
發布緊急采購，3分鐘左右您將得到回復。