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參數資料
| 型號： | INA-12063-TR1 |
| 英文描述： | 1.5 GHz Low Noise Self-Biased Transistor Amplifier |
| 中文描述： | 1.5 GHz的低噪聲自偏置晶體管放大器 |
| 文件頁數： | 1/24頁 |
| 文件大小： | 351K |
| 代理商： | INA-12063-TR1 |
6-116
Description
Hewlett-Packard’s INA-12063 is a
Silicon monolithic self-biased
transistor amplifier that offers
excellent gain and noise figure for
applications to 1.5 GHz. Packaged
in an ultra-miniature SOT-363
package, it requires half the board
space of a SOT-143 package.
The INA-12063 is a unique RFIC
that combines the performance
flexibility of a discrete transistor
with the simplicity of using an
integrated circuit. Using a pat-
ented bias circuit, the perfor-
mance and operating current of
the INA-12063 can be adjusted
over the 1 to 10mA range.
The INA-12063 is fabricated using
HP’s 30 GHz f
MAX
ISOSAT
Silicon bipolar process which
uses nitride self-alignment
submicrometer lithography,
trench isolation, ion implantation,
gold metalization, and polyimide
intermetal dielectric and scratch
protection to achieve superior
performance, uniformity, and
reliability.
1.5 GHz Low Noise Self-Biased
Transistor Amplifier
Technical Data
INA-12063
Features
Integrated, Active Bias
Circuit
Single Positive Supply
Voltage (1.5 – 5V)
Current Adjustable, 1 to
10mA
2 dB Noise Figure at
900MHz
16 dB Gain at 900 MHz
25 dB Gain at 100 MHz
Applications
Amplifier Applications for
Cellular, Cordless, Special
Mobile Radio, PCS, ISM,
and Wireless LAN
Applications
Surface Mount Package
SOT-363 (SC-70)
Pin Connections and
Package Marking
Equivalent Circuit
(Simplified)
Note:
Package marking provides orientation
and identification.
RF OUTPUT
C
GND 1
1
I
bias
GND 2
RF INPUT
1
2
3
6
5
4 V
d
RF
INPUT
GND 1
RF
OUTPUT
and V
c
GND 2
V
d
I
bias
RF
FEEDBACK
NETWORK
ACTIVE
BIAS
CIRCUIT
5965-5365E
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