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參數(shù)資料
| 型號： | IPB080N06NG |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | OptiMOS㈢ Power-Transistor |
| 中文描述： | 的OptiMOS㈢功率晶體管 |
| 文件頁數(shù)： | 1/10頁 |
| 文件大小： | 446K |
| 代理商： | IPB080N06NG |
IPB080N06N G IPP080N06N G
Opti
MOS
Power-Transistor
Features
Low gate charge for fast switching applications
N-channel enhancement - normal level
175 °C operating temperature
Avalanche rated
Pb-free lead plating, RoHS compliant
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Unit
Continuous drain current
I
D
T
C
=25 °C
1)
80
A
T
C
=100 °C
76
Pulsed drain current
I
D,pulse
T
C
=25 °C
2)
320
Avalanche energy, single pulse
E
AS
I
D
=80 A,
R
GS
=25
448
mJ
Reverse diode d
v
/d
t
d
v
/d
t
I
D
=80 A,
V
DS
=48 V,
d
i
/d
t
=200 A/μs,
T
j,max
=175 °C
6
kV/μs
Gate source voltage
V
GS
±20
V
Power dissipation
P
tot
T
C
=25 °C
214
W
Operating and storage temperature
T
j
,
T
stg
-55 ... 175
°C
IEC climatic category; DIN IEC 68-1
55/175/56
Value
2)
See figure 3
1)
Current is limited by bondwire; with an
R
thJC
=0.7 K/W the chip is able to carry 107 A.
V
DS
60
V
R
DS(on),max SMDversion
7.7
m
I
D
80
A
Product Summary
Type
IPB080N06N G
IPP080N06N G
Package
P-TO263-3-2
P-TO220-3-1
Marking
080N06N
080N06N
Rev. 1.01
page 1
2006-05-02
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|---|---|
| IPB080N06NG_10 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:OptiMOS? Power-Transistor Features Low gate charge for fast switching applications |
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| IPB081N06L3 G | 功能描述:MOSFET OptiMOS 3 PWR TRANST 60V 50A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IPB081N06L3G | 制造商:Infineon Technologies AG 功能描述: |
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