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參數(shù)資料
| 型號(hào)： | IPD03N03LAG |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | OptiMOS㈢2 Power-Transistor |
| 中文描述： | 的OptiMOS㈢2功率晶體管 |
| 文件頁數(shù)： | 1/10頁 |
| 文件大?。?/td> | 335K |
| 代理商： | IPD03N03LAG |
IPD03N03LA G IPS03N03LA G
Opti
MOS
2 Power-Transistor
Features
Ideal for high-frequency dc/dc converters
Qualified according to JEDEC
1)
for target applications
N-channel, logic level
Excellent gate charge x
R
DS(on)
product (FOM)
Superior thermal resistance
175 °C operating temperature
Pb-free lead plating; RoHS compliant
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Unit
Continuous drain current
I
D
T
C
=25 °C
2)
90
A
T
C
=100 °C
90
Pulsed drain current
I
D,pulse
T
C
=25 °C
3)
360
Avalanche energy, single pulse
E
AS
I
D
=90 A,
R
GS
=25
300
mJ
Reverse diode d
v
/d
t
d
v
/d
t
I
D
=90 A,
V
DS
=20 V,
d
i
/d
t
=200 A/μs,
T
j,max
=175 °C
6
kV/μs
Gate source voltage
4)
V
GS
±20
V
Power dissipation
P
tot
T
C
=25 °C
115
W
Operating and storage temperature
T
j
,
T
stg
-55 ... 175
°C
IEC climatic category; DIN IEC 68-1
55/175/56
Value
V
DS
25
V
R
DS(on),max
(SMD Version)
3.2
m
I
D
90
A
Product Summary
Type
IPD03N03LA G
IPS03N03LA G
Package
P-TO252-3-11
P-TO251-3-11
Marking
03N03LA
03N03LA
Rev. 1.2
page 1
2006-05-11
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IPD03N03LAGXT | 制造商:Infineon Technologies AG 功能描述:Trans MOSFET N-CH 25V 90A 3-Pin(2+Tab) TO-252 |
| IPD03N03LB | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:OptiMOS 2 Power-Transistor |
| IPD03N03LB G | 功能描述:MOSFET N-CH 30V 90A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IPD03N03LBG | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:OptiMOS 2 Power-Transistor |
| IPD03N03LBGXT | 制造商:Infineon Technologies AG 功能描述:Trans MOSFET N-CH 30V 90A 3-Pin(2+Tab) TO-252 |
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