- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄384485 > IPD05N03LB (INFINEON TECHNOLOGIES AG) OptiMOS2 Power-Transistor PDF資料下載
參數(shù)資料
| 型號(hào)： | IPD05N03LB |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | OptiMOS2 Power-Transistor |
| 中文描述： | OptiMOS2功率晶體管 |
| 文件頁(yè)數(shù)： | 1/11頁(yè) |
| 文件大小： | 434K |
| 代理商： | IPD05N03LB |
IPD05N03LA IPF05N03LA
IPS05N03LA IPU05N03LA
Opti
MOS
2 Power-Transistor
Features
Ideal for high-frequency dc/dc converters
Qualified according to JEDEC
1)
for target application
N-channel, logic level
Excellent gate charge x
R
DS(on)
product (FOM)
Superior thermal resistance
175 °C operating temperature
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Unit
Continuous drain current
I
D
T
C
=25 °C
2)
50
A
T
C
=100 °C
50
Pulsed drain current
I
D,pulse
T
C
=25 °C
3)
350
Avalanche energy, single pulse
E
AS
I
D
=45 A,
R
GS
=25
300
mJ
Reverse diode d
v
/d
t
d
v
/d
t
I
D
=50 A,
V
DS
=20 V,
d
i
/d
t
=200 A/μs,
T
j,max
=175 °C
6
kV/μs
Gate source voltage
4)
V
GS
±20
V
Power dissipation
P
tot
T
C
=25 °C
94
W
Operating and storage temperature
T
j
,
T
stg
-55 ... 175
°C
IEC climatic category; DIN IEC 68-1
55/175/56
Value
V
DS
25
V
R
DS(on),max
(SMD version)
5.1
m
I
D
50
A
Product Summary
Type
Package
Ordering Code
Marking
IPD05N03LA
P-TO252-3-11
Q67042-S4144
05N03LA
IPF05N03LA
P-TP-TO252-3-23
Q67042-S
P-TO252-3-23
0P-TO251-3-11
IPS05N03LA
Q67P-TO251-3-11
Q67042-S4194
0Q67042-S4244
IPU05N03LA
Marking
05NP-TO251-3-21
0Q67042-S4230
005N03LA
Type
IPD05N03LA
IPF05N03LA
IPS05N03LA
IPU05N03LA
P-TO251-3-21
Q67042-S4230
05N03LA
Rev. 1.7
page 1
2004-05-19
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IPS511G | FULLY PROTECTED HIGH SIDE POWER MOSFET SWITCH |
| IPS512G | FULLY PROTECTED HIGH SIDE POWER MOSFET SWITCH |
| IPS511 | FULLY PROTECTED HIGH SIDE POWER MOSFET SWITCH |
| IPS511S | FULLY PROTECTED HIGH SIDE POWER MOSFET SWITCH |
| IPS5551T | FULLY PROTECTED HIGH SIDE POWER MOSFET SWITCH |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IPD05N03LB G | 功能描述:MOSFET N-CH 30V 90A DPAK RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:OptiMOS™ 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| IPD05N03LBG | 功能描述:MOSFET N-Channel MOSFET 20-200V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IPD05N03LBGXT | 制造商:Infineon Technologies AG 功能描述:Trans MOSFET N-CH 30V 90A 3-Pin(2+Tab) TO-252 |
| IPD060N03L G | 功能描述:MOSFET N-CH 30V 50A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IPD060N03LG | 制造商:Infineon Technologies AG 功能描述:MOSFET N-Channel 30V 50A OptiMOS3 TO252 制造商:Infineon Technologies 功能描述:Trans MOSFET N-CH 30V 50A 3-Pin(2+Tab) TO-252 |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。