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參數資料
| 型號： | IPD06N03LBG |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | OptiMOS㈢2 Power-Transistor |
| 中文描述： | 的OptiMOS㈢2功率晶體管 |
| 文件頁數： | 1/9頁 |
| 文件大小： | 295K |
| 代理商： | IPD06N03LBG |
IPD06N03LB G
Opti
MOS
2 Power-Transistor
Features
Ideal for high-frequency dc/dc converters
Qualified according to JEDEC
1)
for target applications
N-channel, logic level
Excellent gate charge x
R
DS(on)
product (FOM)
Very low on-resistance R DS(on)
Superior thermal resistance
175 °C operating temperature
dv /dt rated
Pb-free lead plating; RoHS compliant
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Unit
Continuous drain current
I
D
T
C
=25 °C
2)
50
A
T
C
=100 °C
50
Pulsed drain current
I
D,pulse
T
C
=25 °C
3)
200
Avalanche energy, single pulse
E
AS
I
D
=50 A,
R
GS
=25
160
mJ
Reverse diode d
v
/d
t
d
v
/d
t
I
D
=50 A,
V
DS
=20 V,
d
i
/d
t
=200 A/μs,
T
j,max
=175 °C
6
kV/μs
Gate source voltage
4)
V
GS
±20
V
Power dissipation
P
tot
T
C
=25 °C
83
W
Operating and storage temperature
T
j
,
T
stg
-55 ... 175
°C
IEC climatic category; DIN IEC 68-1
55/175/56
Value
V
DS
30
V
R
DS(on),max
6.1
m
I
D
50
A
Product Summary
PG-TO252-3
Type
Package
Marking
IPD06N03LB G
PG-TO252-3-11
06N03LB
Rev. 1.7
page 1
2006-05-15
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