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參數(shù)資料
| 型號： | IPD12N03LBG |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | OptiMOS㈢2 Power-Transistor |
| 中文描述： | 的OptiMOS㈢2功率晶體管 |
| 文件頁數(shù)： | 1/12頁 |
| 文件大小： | 427K |
| 代理商： | IPD12N03LBG |
Type
IPD12N03LB G IPS12N03LB G
IPU12N03LB G IPF12N03LB G
Opti
MOS
2 Power-Transistor
Package
Marking
Qualified according to JEDEC
1)
for target applications
N-channel, logic level
Excellent gate charge x
R
DS(on)
product (FOM)
Superior thermal resistance
175 °C operating temperature
Pb-free lead plating; RoHS compliant
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Unit
Continuous drain current
I
D
T
C
=25 °C
2)
30
A
T
C
=100 °C
30
Pulsed drain current
I
D,pulse
T
C
=25 °C
3)
120
Avalanche energy, single pulse
E
AS
I
D
=30 A,
R
GS
=25
64
mJ
Reverse diode d
v
/d
t
d
v
/d
t
I
D
=30 A,
V
DS
=20 V,
d
i
/d
t
=200 A/μs,
T
j,max
=175 °C
6
kV/μs
Gate source voltage
4)
V
GS
±20
V
Power dissipation
P
tot
T
C
=25 °C
52
W
Operating and storage temperature
T
j
,
T
stg
-55 ... 175
°C
IEC climatic category; DIN IEC 68-1
55/175/56
Value
V
DS
30
V
R
DS(on),max
11.6
m
I
D
30
A
Product Summary
Type
IPD12N03LB G
IPS12N03LB G
IPF12N03LB G
IPU12N03LB G
Package
PG-TO252-3-11
PG-TO251-3-11
PG-TO252-3-23
PG-TO251-3-1
Marking
12N03LB
12N03LB
12N03LB
12N03LB
Rev. 1.5
page 1
2006-05-15
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