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參數資料
| 型號： | IPD13N03LAG |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | OptiMOS㈢2 Power-Transistor |
| 中文描述： | 的OptiMOS㈢2功率晶體管 |
| 文件頁數： | 1/12頁 |
| 文件大?。?/td> | 413K |
| 代理商： | IPD13N03LAG |
IPD09N03LA G IPF09N03LA G
IPS09N03LA G IPU09N03LA G
Opti
MOS
2 Power-Transistor
Features
Ideal for high-frequency dc/dc converters
Qualified according to JEDEC
1)
for target application
N-channel, logic level
Excellent gate charge x
R
DS(on)
product (FOM)
Superior thermal resistance
175 °C operating temperature
Pb-free lead plating; RoHS compliant
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Unit
Continuous drain current
I
D
T
C
=25 °C
2)
50
A
T
C
=100 °C
45
Pulsed drain current
I
D,pulse
T
C
=25 °C
3)
350
Avalanche energy, single pulse
E
AS
I
D
=45 A,
R
GS
=25
75
mJ
Reverse diode d
v
/d
t
d
v
/d
t
I
D
=50 A,
V
DS
=20 V,
d
i
/d
t
=200 A/μs,
T
j,max
=175 °C
6
kV/μs
Gate source voltage
4)
V
GS
±20
V
Power dissipation
P
tot
T
C
=25 °C
63
W
Operating and storage temperature
T
j
,
T
stg
-55 ... 175
°C
IEC climatic category; DIN IEC 68-1
55/175/56
Value
V
DS
25
V
R
DS(on),max
(SMD version)
8.6
m
I
D
50
A
Product Summary
Type
IPD09N03LA
IPF09N03LA
IPS09N03LA
IPU09N03LA
Package
P-TO252-3-11
P-TO252-3-23
P-TO251-3-11
P-TO251-3-1
Marking
09N03LA
09N03LA
09N03LA
09N03LA
Rev. 2.0
page 1
2006-05-11
相關PDF資料 |
PDF描述 |
|---|---|
| IPF09N03LAG | OptiMOS㈢2 Power-Transistor |
| IPF13N03LAG | OptiMOS㈢2 Power-Transistor |
| IPD09N03LA | OptiMOS 2 Power-Transistor |
| IPD09N03LBG | OptiMOS㈢2 Power-Transistor |
| IPD10N03LAG | OptiMOS㈢2 Power-Transistor |
相關代理商/技術參數 |
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|---|---|
| IPD13N03LAGBUMA1 | 制造商:Infineon Technologies AG 功能描述:MOSFET N-CH 25V 30A DPAK |
| IPD13N03LAGXT | 制造商:Infineon Technologies AG 功能描述:Trans MOSFET N-CH 25V 30A 3-Pin(2+Tab) TO-252 制造商:Infineon Technologies AG 功能描述:TRANS MOSFET N-CH 25V 30A 3PIN TO-252 - Cut TR (SOS) 制造商:Infineon Technologies 功能描述:Infineon IPD13N03LAGXT MOSFETs |
| IPD144N06N G | 功能描述:MOSFET N-CH 60V 50A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IPD144N06NG | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:OptiMOS㈢ Power-Transistor |
| IPD144N06NGBTMA1 | 制造商:Infineon Technologies AG 功能描述:Trans MOSFET N-CH 60V 50A 3-Pin(2+Tab) TO-252 制造商:Infineon Technologies AG 功能描述:MOSFET N-CH 60V 50A TO-252 |
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