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參數資料
型號: IPDH4N03LAG
廠商: INFINEON TECHNOLOGIES AG
英文描述: OPTIMOS 2 POWER - TRANSISTOR
中文描述: 掩埋2電源-晶體管
文件頁數: 1/9頁
文件大小: 311K
代理商: IPDH4N03LAG
IPDH4N03LA G IPSH4N03LA G
Opti
MOS
2 Power-Transistor
Features
Ideal for high-frequency dc/dc converters
Qualified according to JEDEC
1)
for target applications
N-channel, logic level
Excellent gate charge x
R
DS(on)
product (FOM)
Superior thermal resistance
175 °C operating temperature
Pb-free lead plating; RoHS compliant
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Unit
Continuous drain current
I
D
T
C
=25 °C
2)
90
A
T
C
=100 °C
77
Pulsed drain current
I
D,pulse
T
C
=25 °C
3)
360
Avalanche energy, single pulse
E
AS
I
D
=90 A,
R
GS
=25
150
mJ
Reverse diode d
v
/d
t
d
v
/d
t
I
D
=90 A,
V
DS
=20 V,
d
i
/d
t
=200 A/μs,
T
j,max
=175 °C
6
kV/μs
Gate source voltage
4)
V
GS
±20
V
Power dissipation
P
tot
T
C
=25 °C
94
W
Operating and storage temperature
T
j
,
T
stg
-55 ... 175
°C
IEC climatic category; DIN IEC 68-1
55/175/56
Value
V
DS
25
V
R
DS(on),max
(SMD Version)
4.2
m
I
D
90
A
Product Summary
Type
IPDH4N03LA G
IPSH4N03LA G
Package
P-TO252-3-11
P-TO251-3-11
Ordering Code
Q67042-S4250
Q67042-S4254
Marking
H4N03LA
H4N03LA
Rev. 0.92 - target data sheet
page 1
2004-10-27
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相關代理商/技術參數
參數描述
IPDH4N03LA-G 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:OPTIMOS 2 POWER - TRANSISTOR
IPDH4N03LAGBUMA1 制造商:Infineon Technologies AG 功能描述:MOSFET N-CH 25V 90A TO252-3-11
IPDH4N03LAGXT 制造商:Infineon Technologies AG 功能描述:Trans MOSFET N-CH 25V 90A 3-Pin(2+Tab) TO-252
IPDH5N03LA 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:OptiMOS㈢2 Power-Transistor
IPDH5N03LA G 功能描述:MOSFET N-CH 25V 50A DPAK RoHS:是 類別:分離式半導體產品 >> FET - 單 系列:OptiMOS™ 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道,金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續漏極(Id) @ 25° C:18A 開態Rds(最大)@ Id, Vgs @ 25° C:180 毫歐 @ 9A,10V Id 時的 Vgs(th)(最大):4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件
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