- 您現在的位置：買賣IC網 > PDF目錄360907 > IPS0551T(SMD220) TRANSISTOR | MOSFET | N-CHANNEL | 37V V(BR)DSS | TO-273VAR PDF資料下載
參數資料
| 型號： | IPS0551T(SMD220) |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 37V V(BR)DSS | TO-273VAR |
| 中文描述： | 晶體管| MOSFET的| N溝道|片山五（巴西）直資|到273VAR |
| 文件頁數： | 1/10頁 |
| 文件大小： | 105K |
| 代理商： | IPS0551T(SMD220) |
Features
Over temperature shutdown
Over current shutdown
Active clamp
Low current & logic level input
E.S.D protection
IPS0551T
FULLY PROTECTED POWER MOSFET SWITCH
Data Sheet No. PD60160-B
Package
Product Summary
Typical Connection
Description
The IPS0551T is a fully protected three terminal SMART
POWER MOSFET that features over-current, over-tem-
perature, ESD protection, and drain to source active
clamp. This device combines a HEXFET POWER
MOSFET and a gate driver. It offers full protection and
high reliability required in harsh environments. The driver
allows short switching times and provides efficient protec-
tion by turning OFF the power MOSFET when temperature
exceeds 165
o
C or when the drain current reaches 100A.
The device restarts once the input is cycled. The ava-
lanche capability is significantly enhanced by the active
clamp and covers most inductive load demagnetiza-
tions.
R
ds(on)
6.0m
(max)
V
clamp
40V
I
shutdown
100A
T
on
/T
off
4
μ
s
SUPER SMD220
SUPER TO220
L o ad
R in serie s
( if need ed )
L o g ic signal
IN
D
co ntro l
S
www.irf.com
1
(Refer to lead assignment for correct pin configuration)
相關PDF資料 |
PDF描述 |
|---|---|
| IPS0551T(TO220) | TRANSISTOR | MOSFET | N-CHANNEL | 37V V(BR)DSS | TO-273AA |
| IPS511E | PERIPHERAL DRIVER|1 DRIVER|MOS|LLCC|18PIN|CERAMIC |
| IPS5551T(SMD220) | PERIPHERAL DRIVER|1 DRIVER|MOS|SIP|3PIN|PLASTIC |
| IPS5551T(TO220) | PERIPHERAL DRIVER|1 DRIVER|MOS|SIP|3PIN|PLASTIC |
| IPSA0524S | Analog IC |
相關代理商/技術參數 |
參數描述 |
|---|---|
| IPS05N03LA | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:OptiMOS 2 Power-Transistor |
| IPS05N03LA G | 功能描述:MOSFET N-CH 25V 50A IPAK RoHS:是 類別:分離式半導體產品 >> FET - 單 系列:OptiMOS™ 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續漏極(Id) @ 25° C:18A 開態Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
| IPS05N03LAG | 功能描述:MOSFET N-KANAL POWER MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IPS05N03LAGXK | 制造商:Infineon Technologies AG 功能描述:Trans MOSFET N-CH 25V 50A 3-Pin(3+Tab) TO-251 |
| IPS05N03LB G | 功能描述:MOSFET N-CH 30V 90A IPAK RoHS:是 類別:分離式半導體產品 >> FET - 單 系列:OptiMOS™ 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續漏極(Id) @ 25° C:18A 開態Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
發布緊急采購，3分鐘左右您將得到回復。