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參數資料
| 型號： | IR01HD224-P2 |
| 英文描述： | PERIPHERAL DRIVER|1 DRIVER|CMOS|SIP|9PIN|PLASTIC |
| 中文描述： | 外圍設備驅動程序| 1驅動器|的CMOS |園區| 9針|塑料 |
| 文件頁數： | 1/7頁 |
| 文件大小： | 85K |
| 代理商： | IR01HD224-P2 |
Data Sheet No. PD-6.075-G
IR01H(D)214 / IR01H(D)214-P2
IR01H(D)224 / IR01H(D)224-P2
IR01H(D)420 / IR01H(D)420-P2
HIGH VOLTAGE HALF BRIDGE
Product Summary
Typical Connection
Features
Output Power MOSFETs in half-bridge configuration
500V rated breakdown voltage
High side gate drive designed for bootstrap
operation
Matched propagation delay for both channels
Undervoltage lockout
5V Schmitt-triggered input logic
Half-Bridge output in phase with HIN
Heatsink version (P2) with improved PD
Description
The IR01H(D)xxx is a high voltage, high speed half
bridge. Proprietary HVIC and latch immune CMOS
technologies, along with the HEXFET power
MOSFET technology, enable ruggedized single
package construction. The logic inputs are compat-
ible with standard CMOS or LSTTL outputs. The
front end features an independent high and low side
driver in phase with the logic compatible input
signals. The output features two HEXFETs in a half-
bridge configuration with a high pulse current buffer
stage designed for minimum cross-conduction in the
half bridge. Propagation delays for the high and low
side power MOSFETs are matched to simplify use.
1
Packages
250V- 214/224
500V - 420
t
on/off
t
rr
R
DS
(on)
130 & 90 ns
260 ns
2.0
- H214
1.1
- H224
3.0
- H420
P
D
(T
A
= 25
o
C)
2.0W
4.0W - P2
V
IN (max)
HV DC Bus
NOTE: D1 is not required for
the HD type
VIN
COM
H
IN
1
2
3
4
6
7
9
Vcc
COM
VO
V
IN
V
B
TO
LOAD
H
IN
L
IN
Vcc
L
IN
D1
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