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參數資料
| 型號： | IR110BG12D |
| 元件分類： | 晶閘管 |
| 英文描述： | SCR |
| 封裝： | DIE |
| 文件頁數： | 1/2頁 |
| 文件大小： | 55K |
| 代理商： | IR110BG12D |
1
www.irf.com
Junction Size:
Square 110 mils
Wafer Size:
4"
V
RRM Class:
1200 V
Passivation Process:
Glassivated MESA
Reference IR Packaged Part:
16TTS Series
PHASE CONTROL THYRISTORS
IR110BG12DCB
Major Ratings and Characteristics
Parameters
Units
Test Conditions
V
TM
Maximum On-state Voltage
1.4 V
T
J = 25°C, IT = 10 A
V
RRM
Reverse Breakdown Voltage
1200 V
T
J = 25°C, IRRM = 100 A
(1)
I
GT
Max. Required DC Gate Current to Trigger
60 mA
T
J = 25° C, anode supply = 6 V, resistive load
V
GT
Max. Required DC Gate Voltage to Trigger
2 V
T
J = 25° C, anode supply = 6 V, resistive load
I
H
Holding Current Range
5 to 100 mA
Anode supply = 6 V, resistive load
I
L
Maximum Latching Current
200 mA
Anode supply = 6 V, resistive load
Mechanical Characteristics
Nominal Back Metal Composition, Thickness
Cr - Ni - Ag (1 KA - 4 KA - 6 KA)
Nominal Front Metal Composition, Thickness
100% Al, (20m)
Chip Dimensions
110 x 110 mils (see drawing)
Wafer Diameter
100 mm, with std. <110> flat
Wafer Thickness
350 m ± 10 m
Maximum Width of Sawing Line
130 m
Reject Ink Dot Size
0.25 mm diameter minimum
Ink Dot Location
See drawing
Recommended Storage Environment
Storage in original container, in dessicated
nitrogen, with no contamination
Bulletin I0101J 12/01
(1) Nitrogen flow on die edge.
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