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參數資料
| 型號： | IR185BG12DCB |
| 文件頁數： | 1/3頁 |
| 文件大小： | 61K |
| 代理商： | IR185BG12DCB |
1
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Junction Size:
Square 185 mils
Wafer Size:
4"
V
RRM
Class:
1200 V
Passivation Process:
Glassivated MESA
Reference IR Packaged Part:
25TTS Series
PHASE CONTROL THYRISTORS
IR185BG12DCB
Major Ratings and Characteristics
Parameters
Units
Test Conditions
V
TM
Maximum On-state Voltage
1.25 V
T
J
= 25°C, I
T
= 16 A
V
RRM
Reverse Breakdown Voltage
1200 V
T
J
= 25°C, I
RRM
= 100 μA
(1)
I
GT
Max. Required DC Gate Current to Trigger
60 mA
T
J
= 25° C, anode supply = 6 V, resistive load
V
GT
Max. Required DC Gate Voltage to Trigger
2 V
T
J
= 25° C, anode supply = 6 V, resistive load
I
H
Holding Current Range
5 to 100 mA
Anode supply = 6 V, resistive load
I
L
Maximum Latching Current
200 mA
Anode supply = 6 V, resistive load
Mechanical Characteristics
Nominal Back Metal Composition, Thickness
Cr - Ni - Ag (1 KA - 4 KA - 6 KA)
Nominal Front Metal Composition, Thickness
100% Al, (20μm)
Chip Dimensions
185 x 185 mils (see drawing)
Wafer Diameter
100 mm, with std. <110> flat
Wafer Thickness
350 μm ± 10 μm
Maximum Width of Sawing Line
130 μm
Reject Ink Dot Size
0.25 mm diameter minimum
Ink Dot Location
See drawing
Recommended Storage Environment
Storage in original container, in dessicated
nitrogen, with no contamination
Bulletin I0202J rev. B 09/99
(1)
Nitrogen flow on die edge.
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