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參數(shù)資料
| 型號(hào)： | IR2111PBF |
| 廠商： | International Rectifier |
| 英文描述： | HALF-BRIDGE DRIVER |
| 中文描述： | 半橋驅(qū)動(dòng)器 |
| 文件頁數(shù)： | 1/7頁 |
| 文件大小： | 291K |
| 代理商： | IR2111PBF |
V
CC
IN
V
B
HO
V
S
LO
COM
IN
up to 600V
TO
LOAD
V
CC
Features
n
Floating channel designed for bootstrap operation
Fully operational to +600V
Tolerant to negative transient voltage
dV/dt immune
n
Gate drive supply range from 10 to 20V
n
Undervoltage lockout for both channels
n
CMOS Schmitt-triggered inputs with pull-down
n
Matched propagation delay for both channels
n
Internally set deadtime
n
High side output in phase with input
Description
The IR2111 is a high voltage, high speed power
MOSFET and IGBT driver with dependent high and
low side referenced output channels designed for
half-bridge applications. Proprietary HVIC and latch
immune CMOS technologies enable ruggedized
monolithic construction. Logic input is compatible
with standard CMOS outputs. The output drivers
feature a high pulse current buffer stage designed
for minimum driver cross-conduction. Internal
deadtime is provided to avoid shoot-through in the
output half-bridge. The floating channel can be used
to drive an N-channel power MOSFET or IGBT in
the high side configuration which operates up to
600 volts.
Typical Connection
Data Sheet No. PD-6.028C
IR2111
HALF-BRIDGE DRIVER
Product Summary
V
OFFSET
600V max.
I
O
+/-
200 mA / 420 mA
V
OUT
10 - 20V
t
on/off
(typ.)
Deadtime (typ.)
850 & 150 ns
700 ns
Packages
C
ONTROL
I
NTEGRATED
C
IRCUIT
D
ESIGNERS
M
ANUAL
B-39
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相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IR2111S | HALF-BRIDGE DRIVER |
| IR2111SPBF | HALF-BRIDGE DRIVER |
| IR2114SS | HALF-BRIDGE GATE DRIVER IC |
| IR2122 | CURRENT SENSING SINGLE CHANNEL DRIVER |
| IR2122S | CURRENT SENSING SINGLE CHANNEL DRIVER |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IR2111S | 功能描述:IC DRIVER HALF-BRIDGE 8-SOIC RoHS:否 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動(dòng)器 - 外部開關(guān) 系列:- 標(biāo)準(zhǔn)包裝:50 系列:- 配置:低端 輸入類型:非反相 延遲時(shí)間:40ns 電流 - 峰:9A 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導(dǎo)啟動(dòng)）:- 電源電壓:4.5 V ~ 35 V 工作溫度:-40°C ~ 125°C 安裝類型:表面貼裝 封裝/外殼:TO-263-6，D²Pak（5 引線+接片），TO-263BA 供應(yīng)商設(shè)備封裝:TO-263 包裝:管件 |
| IR2111SPBF | 功能描述:功率驅(qū)動(dòng)器IC HALF BRDG DRVR 600V 650ns 200mA RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時(shí)間: 下降時(shí)間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| IR2111STR | 功能描述:IC DRIVER HALF-BRIDGE 8-SOIC RoHS:否 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動(dòng)器 - 外部開關(guān) 系列:- 標(biāo)準(zhǔn)包裝:50 系列:- 配置:低端 輸入類型:非反相 延遲時(shí)間:40ns 電流 - 峰:9A 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導(dǎo)啟動(dòng)）:- 電源電壓:4.5 V ~ 35 V 工作溫度:-40°C ~ 125°C 安裝類型:表面貼裝 封裝/外殼:TO-263-6，D²Pak（5 引線+接片），TO-263BA 供應(yīng)商設(shè)備封裝:TO-263 包裝:管件 |
| IR2111STRPBF | 功能描述:功率驅(qū)動(dòng)器IC HALF BRDG DRVR 600V 650ns 200mA RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時(shí)間: 下降時(shí)間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| IR2112 | 功能描述:IC MOSFET DRVR HI/LO SIDE 14-DIP RoHS:否 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動(dòng)器 - 外部開關(guān) 系列:- 標(biāo)準(zhǔn)包裝:50 系列:- 配置:高端 輸入類型:非反相 延遲時(shí)間:200ns 電流 - 峰:250mA 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導(dǎo)啟動(dòng)）:600V 電源電壓:12 V ~ 20 V 工作溫度:-40°C ~ 125°C 安裝類型:通孔 封裝/外殼:8-DIP（0.300"，7.62mm） 供應(yīng)商設(shè)備封裝:8-DIP 包裝:管件 其它名稱:*IR2127 |
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