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參數(shù)資料
| 型號(hào)： | IR21531SPbF |
| 廠(chǎng)商： | International Rectifier |
| 英文描述： | SELF-OSCILLATING HALF-BRIDGE DRIVER |
| 中文描述： | 自激式半橋驅(qū)動(dòng)器 |
| 文件頁(yè)數(shù)： | 1/9頁(yè) |
| 文件大小： | 130K |
| 代理商： | IR21531SPBF |
Features
Integrated 600V half-bridge gate driver
15.6V zener clamp on Vcc
True micropower start up
Tighter initial deadtime control
Low temperature coefficient deadtime
Shutdown feature (1/6th Vcc) on C
T
pin
Increased undervoltage lockout Hysteresis (1V)
Lower power level-shifting circuit
Constant LO, HO pulse widths at startup
Lower di/dt gate driver for better noise immunity
Low side output in phase with R
T
Internal 50nsec (typ.) bootstrap diode (IR21531D)
Excellent latch immunity on all inputs and outputs
ESD protection on all leads
Also available LEAD_FREE
Description
The IR21531(D)(S) are an improved version of the
popular IR2155 and IR2151 gate driver ICs, and in-
corporates a high voltage half-bridge gate driver with a front end oscillator similar to the industry standard
CMOS 555 timer. The IR21531 provides more functionality and is easier to use than previous ICs. A shutdown
feature has been designed into the CT pin, so that both gate driver outputs can be disabled using a low voltage
control signal. In addition, the gate driver output pulse widths are the same once the rising undervoltage
lockout threshold on VCC has been reached, resulting in a more stable profile of frequency vs time at
startup. Noise immunity has been improved significantly, both by lowering the peak di/dt of the gate drivers,
and by increasing the undervoltage lockout hysteresis to 1V. Finally, special attention has been payed to
maximizing the latch immunity of the device, and providing comprehensive ESD protection on all pins.
Preliminary Data Sheet No. PD60131-L
SELF-OSCILLATING HALF-BRIDGE DRIVER
Product Summary
V
OFFSET
600V max.
Duty Cycle
50%
Tr/Tp
80/40ns
V
clamp
15.6V
Deadtime (typ.)
0.6
μ
s
Typical Connections
IR21531D(S) & (PbF)
IR21531D
IR21531(S)
VB
HO
VS
LO
VCC
RT
CT
COM
600V
MAX
Shutdown
VB
HO
VS
LO
VCC
RT
CT
COM
600V
MAX
Shutdown
www.irf.com
1
Packages
8 Lead PDIP
8 Lead SOIC
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IR2156 | BALLAST CONTROL IC |
| IR2156PbF | BALLAST CONTROL IC |
| IR2156S | BALLAST CONTROL IC |
| IR2156SPbF | BALLAST CONTROL IC |
| IR2159S | DIMMING BALLAST CONTROL IC |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IR21531STR | 功能描述:IC DRVR HALF BRDG SELF-OSC 8SOIC RoHS:否 類(lèi)別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動(dòng)器 - 外部開(kāi)關(guān) 系列:- 標(biāo)準(zhǔn)包裝:50 系列:- 配置:高端 輸入類(lèi)型:非反相 延遲時(shí)間:200ns 電流 - 峰:250mA 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導(dǎo)啟動(dòng)）:600V 電源電壓:12 V ~ 20 V 工作溫度:-40°C ~ 125°C 安裝類(lèi)型:通孔 封裝/外殼:8-DIP（0.300"，7.62mm） 供應(yīng)商設(shè)備封裝:8-DIP 包裝:管件 其它名稱(chēng):*IR2127 |
| IR21531STRPBF | 功能描述:功率驅(qū)動(dòng)器IC HALF BRDG DRVR 600V 15.6Vclamp 0.6 RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類(lèi)型:Low Cost High or Low Side MOSFET Driver 上升時(shí)間: 下降時(shí)間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| IR21531STRPBF-CUT TAPE | 制造商:IR 功能描述:IR2153 Series 600 V 200 mA 15.6 V Supply Dual Half Bridge Driver - SOIC-8 |
| IR2153D | 功能描述:IC HALF BRIDGE DRIVER W/DIO 8DIP RoHS:否 類(lèi)別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動(dòng)器 - 外部開(kāi)關(guān) 系列:- 標(biāo)準(zhǔn)包裝:50 系列:- 配置:高端 輸入類(lèi)型:非反相 延遲時(shí)間:200ns 電流 - 峰:250mA 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導(dǎo)啟動(dòng)）:600V 電源電壓:12 V ~ 20 V 工作溫度:-40°C ~ 125°C 安裝類(lèi)型:通孔 封裝/外殼:8-DIP（0.300"，7.62mm） 供應(yīng)商設(shè)備封裝:8-DIP 包裝:管件 其它名稱(chēng):*IR2127 |
| IR2153DPBF | 功能描述:功率驅(qū)動(dòng)器IC HALF BRDG DRVR 600V 210mA 1.2us RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類(lèi)型:Low Cost High or Low Side MOSFET Driver 上升時(shí)間: 下降時(shí)間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
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