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參數資料
| 型號： | IR6320 |
| 文件頁數： | 1/4頁 |
| 文件大小： | 59K |
| 代理商： | IR6320 |
IR6320G
Data Sheet 6.125-G
INTELLIGENT HIGH SIDE MOSFET POWER SWITCH
V
cc(op)
5v-50v
R
ds(on)
85m
I
lim
10A
T
j(sd)
170
o
C
E
av
100mJ
Features
PWM Current Limit for Short Circuit Protection
Over-Temperature Protection
Active Output Negative Clamp
Reverse Battery Protection for Logic Circuit
Broken Ground Protection
Short to VCC Protection
Low Noise Charge Pump
Sleep Mode Supply Current
4kV ESD Protection On All Pins
Logic Ground Isolated From Power Ground
General Description
The IR6320G is a monolithic HIGH SIDE SWITCH with built
in short circuit, over- temperature, ESD, inductive load turn
off capability and diagnostic feedback.
The on-chip protection circuit goes into PWM mode, limiting
the average current during short circuit if the drain current
exceeds 10A. The protection circuit latches off the high side
switch if the junction temperature exceeds 170
°
C and
latches on after the junction temperature falls by 10
°
C. The
Vcc (drain) to OUT (source) voltage is actively clamped at 55V,
improving its performance during turn off with inductive loads.
The on-chip charge pump high side driver stage is floating
and referenced to the source of the power MOSFET. Thus
the logic to power ground isolation can be as high as 50V.
This allows operation with larger offset as well as controlling
the switch during load energy recirculation or regeneration.
A diagnostic pin is provided for status feedback of short
circuit, over temperature and open load detection.
Applications
Solenoid Driver
Programmable Logic Controller
Truth Table
Block Diagram
Available Packages
Condition
Normal
Normal
Output Open
Output Open
Shorted Output
Shorted Output
Over-Temperature
Over-Temperature
In
H
L
H
L
H
L
H
L
Out
H
L
H
H
L
L
L
Current-Limiting
PWM Mode
Dg
H
L
H
H
L
L
L
L
SO8 Package
OUT
GND
Vcc
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相關代理商/技術參數 |
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