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參數資料
| 型號： | IRAMY20UP60B |
| 廠商： | International Rectifier |
| 英文描述： | Flat / Ribbon Cable; Number of Conductors:50; Pitch Spacing:0.05"; Conductor Size AWG:28; No. Strands x Strand Size:7 x 36; Impedance:101ohm; Jacket Material:Polyvinylchloride (PVC); RoHS Compliant: Yes |
| 中文描述： | iMotion的系列20A，600V的 |
| 文件頁數： | 1/16頁 |
| 文件大小： | 335K |
| 代理商： | IRAMY20UP60B |
www.irf.com
1
Features
Integrated Gate Drivers
Temperature Monitor and Protection
Overcurrent shutdown
Fully Isolated Package
Low VCE (on) Non Punch Through IGBT Technology.
Undervoltage lockout for all channels
Matched propagation delay for all channels
5V Schmitt-triggered input logic
Cross-conduction prevention logic
Lower di/dt gate driver for better noise immunity
Motor Power range 0.75~2.2kW / 85~253 Vac
Isolation 2000V
RMS
min
IRAMY20UP60B
Series
20A, 600V
with Internal Shunt Resistor
Integrated Power Hybrid IC for
Appliance Motor Drive Applications.
Description
International Rectifier's IRAMY20UP60B is a 20A, 600V Integrated Power Hybrid IC with Internal Shunt
Resistor for Appliance Motor Drives applications such as air conditioning systems and compressor drivers as
well as for light industrial application. IR's technology offers an extremely compact, high performance AC
motor-driver in a single isolated package to simplify design.
This advanced HIC is a combination of IR's low V
Non Punch-Through IGBT technology and the industry
benchmark 3-Phase high voltage, high speed driver in a fully isolated thermally enhaced package.
A built-in temperature monitor and over-current and over-temperature protections, along with the short-
circuit rated IGBTs and integrated under-voltage lockout function, deliver high level of protection and fail-
safe operation. Using a new developed single in line package (SiP3) with heatspreader for the power die
along with full transfer mold structure minimizes PCB space and resolves isolation problems to heatsink.
PD-96955 Rev. A
Absolute Maximum Ratings
Parameter
V
CES
/ V
RRM
V
+
I
O
@ T
C
=25°C
I
O
@ T
C
=100°C
I
O
F
PWM
P
D
V
ISO
T
J
(IGBT & Diodes)
T
J
(Driver IC)
T
Note 1: Sinusoidal Modulation at V
+
=400V, T
J
=150°C, F
PWM
=20kHz, Modulation Depth=0.8, PF=0.6, See Figure 3.
Note 2: t
P
<100ms; T
C
=25°C; F
PWM
=20kHz. Limited by I
BUS-ITRIP
, see Table "Inverter Section Electrical Characteristics"
Description
IGBT/Diode Blocking Voltage
Positive Bus Input Voltage
RMS Phase Current (Note 1)
RMS Phase Current (Note 1)
Pulsed RMS Phase Current (Note 2)
PWM Carrier Frequency
Power dissipation per IGBT @ T
C
=25°C
Isolation Voltage (1min)
Operating Junction temperature Range
Operating Junction temperature Range
Mounting torque Range (M4 screw)
Value
600
450
20
10
40
20
68
2000
-40 to +150
-40 to +150
0.7 to 1.17
Units
kHz
W
V
RMS
Nm
V
A
°C
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