- 您現在的位置：買賣IC網 > PDF目錄384488 > IRF034 (International Rectifier) REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE) PDF資料下載
參數資料
| 型號： | IRF034 |
| 廠商： | International Rectifier |
| 英文描述： | REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE) |
| 中文描述： | 重復性雪崩和DV /受好評的HEXFET三極管通孔（TO-204AA/AE DT）的 |
| 文件頁數： | 1/7頁 |
| 文件大小： | 144K |
| 代理商： | IRF034 |
Absolute Maximum Ratings
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
Units
ID @ VGS = 0V, TC = 25°C
ID @ VGS = 0V, TC = 100°C
IDM
PD @ TC = 25°C
25
16
100
75
0.60
±20
19
-
-
4.5
W
W/°C
V
mJ
A
mJ
V/ns
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
-55 to 150
300 (0.063 in. (1.6mm) from case for 10s)
11.5(typical)
g
PD - 90585
The HEXFET
technology is the key to International
Rectifier’s advanced line of power MOSFET transistors.
The efficient geometry and unique processing of this latest
“State of the Art” design achieves: very low on-state resis-
tance combined with high transconductance; superior re-
verse energy and diode recovery dv/dt capability.
The HEXFET transistors also feature all of the well estab-
lished advantages of MOSFETs such as voltage control,
very fast switching, ease of paralleling and temperature
stability of the electrical parameters.
They are well suited for applications such as switching
power supplies, motor controls, inverters, choppers, audio
amplifiers and high energy pulse circuits.
o
C
A
REPETITIVE AVALANCHE AND dv/dt RATED
HEXFET
THRU-HOLE (TO-204AA/AE)
IRF034
TRANSISTORS
01/23/01
www.irf.com
1
60V, N-CHANNEL
TO-3
Product Summary
Part Number BVDSS R
DS(on)
IRF034 60V 0.050
25Α
I
D
Features:
Repetitive Avalanche Ratings
Dynamic dv/dt Rating
Hermetically Sealed
Simple Drive Requirements
Ease of Paralleling
For footnotes refer to the last page
相關PDF資料 |
PDF描述 |
|---|---|
| IRF1010ELPbF | HEXFET Power MOSFET |
| IRF1010ESPBF | HEXFET Power MOSFET |
| IRF1010NPBF | HEXFET Power MOSFET |
| IRF1302 | Power MOSFET(Vdss=20V, Rds(on)=4.0mohm, Id=180A) |
| IRF1312LPbF | HEXFET Power MOSFET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| IRF035 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 25A I(D) | TO-204AA |
| IRF03BH100J | 制造商:Vishay Dale 功能描述:IND 10UH 5% 7.9MHZ 85 FERRITE 500MA AXL - Bulk 制造商:Vishay Intertechnologies 功能描述: |
| IRF03BH100K | 功能描述:固定電感器 10uH 10% RoHS:否 制造商:AVX 電感:10 uH 容差:20 % 最大直流電流:1 A 最大直流電阻:0.075 Ohms 工作溫度范圍:- 40 C to + 85 C 自諧振頻率:38 MHz Q 最小值:40 尺寸:4.45 mm W x 6.6 mm L x 2.92 mm H 屏蔽:Shielded 端接類型:SMD/SMT 封裝 / 箱體:6.6 mm x 4.45 mm |
| IRF03BH101J | 制造商:Vishay Dale 功能描述:IND 100UH 5% 2.5MHZ 30 FERRITE 275MA AXL - Bulk |
| IRF03BH101K | 功能描述:固定電感器 10% 100uH RoHS:否 制造商:AVX 電感:10 uH 容差:20 % 最大直流電流:1 A 最大直流電阻:0.075 Ohms 工作溫度范圍:- 40 C to + 85 C 自諧振頻率:38 MHz Q 最小值:40 尺寸:4.45 mm W x 6.6 mm L x 2.92 mm H 屏蔽:Shielded 端接類型:SMD/SMT 封裝 / 箱體:6.6 mm x 4.45 mm |
發布緊急采購，3分鐘左右您將得到回復。